Datasheets
K4S281632I-UC75 by:

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54

Part Details for K4S281632I-UC75 by Samsung Semiconductor

Overview of K4S281632I-UC75 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Price & Stock for K4S281632I-UC75

Part # Distributor Description Stock Price Buy
Bristol Electronics   40
RFQ
Bristol Electronics   Min Qty: 1 26
  • 1 $6.7200
  • 5 $4.3680
  • 13 $3.3600
$3.3600 / $6.7200 Buy Now
Quest Components SYNCHRONOUS DRAM, 8MX16, 5.4NS, CMOS, PDSO54 16
  • 1 $4.0200
  • 3 $3.3500
  • 8 $2.9480
$2.9480 / $4.0200 Buy Now
Quest Components SYNCHRONOUS DRAM, 8MX16, 5.4NS, CMOS, PDSO54 32
  • 1 $4.8240
  • 7 $3.5376
  • 22 $3.2160
$3.2160 / $4.8240 Buy Now
Quest Components SYNCHRONOUS DRAM, 8MX16, 5.4NS, CMOS, PDSO54 67
  • 1 $9.0000
  • 5 $4.5000
  • 45 $4.2000
$4.2000 / $9.0000 Buy Now
Quest Components SYNCHRONOUS DRAM, 8MX16, 5.4NS, CMOS, PDSO54 5
  • 1 $22.5000
  • 2 $21.0000
  • 5 $20.0000
$20.0000 / $22.5000 Buy Now
Quest Components SYNCHRONOUS DRAM, 8MX16, 5.4NS, CMOS, PDSO54 15
  • 1 $7.6500
  • 5 $5.6100
  • 14 $5.1000
$5.1000 / $7.6500 Buy Now

Part Details for K4S281632I-UC75

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K4S281632I-UC75 Part Data Attributes

K4S281632I-UC75 Samsung Semiconductor
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K4S281632I-UC75 Samsung Semiconductor Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Samacsys Manufacturer SAMSUNG
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e6
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.2 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S281632I-UC75

This table gives cross-reference parts and alternative options found for K4S281632I-UC75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S281632I-UC75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
EDS1216AGTA-75-E Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, PLASTIC, TSOP2-54 Elpida Memory Inc K4S281632I-UC75 vs EDS1216AGTA-75-E
NT5SV8M16DT-75B Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Nanya Technology Corporation K4S281632I-UC75 vs NT5SV8M16DT-75B
NT5SE8M16DT-75B Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Nanya Technology Corporation K4S281632I-UC75 vs NT5SE8M16DT-75B
HY57V281620ET-H Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S281632I-UC75 vs HY57V281620ET-H
W9812G6IH-75 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp K4S281632I-UC75 vs W9812G6IH-75
HY57V281620AT-K Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc K4S281632I-UC75 vs HY57V281620AT-K
MT48LC8M16A2P-75:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Micron Technology Inc K4S281632I-UC75 vs MT48LC8M16A2P-75:G
MT48LC8M16A2TG-75 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S281632I-UC75 vs MT48LC8M16A2TG-75
HY57V281620ETP-H Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc K4S281632I-UC75 vs HY57V281620ETP-H
NT5SE8M16DS-75B Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Nanya Technology Corporation K4S281632I-UC75 vs NT5SE8M16DS-75B
Part Number Description Manufacturer Compare
KM416S8030BT-F8 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S281632I-UC75 vs KM416S8030BT-F8
MT48V8M16TG-8XT Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S281632I-UC75 vs MT48V8M16TG-8XT
DPSD8MX16RKY5-DP-XXP12 Synchronous DRAM, 8MX16, CMOS, PDSO54, STACK, LEADLESS, MODULE, TSOP-54 B&B Electronics Manufacturing Company K4S281632I-UC75 vs DPSD8MX16RKY5-DP-XXP12
V55C2128164VAT7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 ProMOS Technologies Inc K4S281632I-UC75 vs V55C2128164VAT7
IS45S16800B-7TLA Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc K4S281632I-UC75 vs IS45S16800B-7TLA
MT48LC32M4A2TG-7EAT:G Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc K4S281632I-UC75 vs MT48LC32M4A2TG-7EAT:G
V55C2128164VAT10I Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 ProMOS Technologies Inc K4S281632I-UC75 vs V55C2128164VAT10I
K4S281632D-TL750 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor K4S281632I-UC75 vs K4S281632D-TL750
HY57V281620BT-K Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 SK Hynix Inc K4S281632I-UC75 vs HY57V281620BT-K
VG36128401ATL-8H-P Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Vanguard International Semiconductor Corporation K4S281632I-UC75 vs VG36128401ATL-8H-P

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