Datasheets
KSH122 by:

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Details for KSH122 by Samsung Semiconductor

Overview of KSH122 by Samsung Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for KSH122

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KSH122 Part Data Attributes

KSH122 Samsung Semiconductor
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KSH122 Samsung Semiconductor Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for KSH122

This table gives cross-reference parts and alternative options found for KSH122. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KSH122, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJD122-TP Power Bipolar Transistor, Plastic/Epoxy, 2 Pin, DPAK-3 Micro Commercial Components KSH122 vs MJD122-TP
KSH122 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation KSH122 vs KSH122
MJD122 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation KSH122 vs MJD122
MJD122T4 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi KSH122 vs MJD122T4
MJD122TF 8A, 100V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 Rochester Electronics LLC KSH122 vs MJD122TF
MJD122G 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi KSH122 vs MJD122G
CJD122TR13 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, Central Semiconductor Corp KSH122 vs CJD122TR13
KSH122TF Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 Fairchild Semiconductor Corporation KSH122 vs KSH122TF
MJD122T4 Low voltage NPN power Darlington transistor STMicroelectronics KSH122 vs MJD122T4
MJD122-T1 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor KSH122 vs MJD122-T1
Part Number Description Manufacturer Compare
MJD122G 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE onsemi KSH122 vs MJD122G
KSH122-TF Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin Samsung Semiconductor KSH122 vs KSH122-TF
MJD122T4 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi KSH122 vs MJD122T4
MJD122T4 Low voltage NPN power Darlington transistor STMicroelectronics KSH122 vs MJD122T4
CJD122TR13 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, Central Semiconductor Corp KSH122 vs CJD122TR13
KSH122TF Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 Fairchild Semiconductor Corporation KSH122 vs KSH122TF
KSH122TF_NL Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation KSH122 vs KSH122TF_NL
MJD122-T1 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 Samsung Semiconductor KSH122 vs MJD122-T1
MJD122 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation KSH122 vs MJD122
KSH122 Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 Fairchild Semiconductor Corporation KSH122 vs KSH122

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