Datasheets
MSC080SMA120B by:

Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD

Part Details for MSC080SMA120B by Microchip Technology Inc

Overview of MSC080SMA120B by Microchip Technology Inc

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Price & Stock for MSC080SMA120B

Part # Distributor Description Stock Price Buy
DISTI # MSC080SMA120B-ND
DigiKey SICFET N-CH 1200V 37A TO247-3 Min Qty: 1 Lead time: 10 Weeks Container: Tube 112
In Stock
  • 1 $12.8000
  • 25 $11.8000
  • 100 $9.6400
$9.6400 / $12.8000 Buy Now
DISTI # MSC080SMA120B
Avnet Americas Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 - Rail/Tube (Alt: MSC080SMA120B) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 1 $12.8000
  • 10 $11.8000
  • 100 $10.2700
$10.2700 / $12.8000 Buy Now
DISTI # 494-MSC080SMA120B
Mouser Electronics MOSFET MOSFET SIC 1200 V 80 mOhm TO-247 RoHS: Compliant 1553
  • 1 $12.8000
  • 30 $11.8000
  • 120 $10.2700
$10.2700 / $12.8000 Buy Now
DISTI # MSC080SMA120B
Microchip Technology Inc MOSFET SIC 1200 V 80 mOhm TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 15

Alternates Available
  • 1 $12.8000
  • 100 $10.2700
  • 500 $9.5800
$9.5800 / $12.8000 Buy Now
Onlinecomponents.com MOSFET - N-Channel - SiCFET (Silicon Carbide) - 1200V - 37A - 20V Rds On - 100mOhm @ 15A, 20V Rds On (Max) @ Id, Vgs - 200W - TO-247-3 Package. 120 In Stock
  • 5 $12.7400
  • 30 $11.6300
  • 60 $11.5700
  • 120 $10.0200
  • 270 $9.9700
  • 510 $9.9200
  • 1,020 $9.8700
$9.8700 / $12.7400 Buy Now
DISTI # MSC080SMA120B
Avnet Americas Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 - Rail/Tube (Alt: MSC080SMA120B) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 1 $12.8000
  • 10 $11.8000
  • 100 $10.2700
$10.2700 / $12.8000 Buy Now
DISTI # MSC080SMA120B
TME Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 26A, Idm: 91A, 200W Min Qty: 1 6
  • 1 $15.3000
  • 3 $14.2000
  • 10 $13.9000
$13.9000 / $15.3000 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 26A, Idm: 91A, 200W 15
RFQ
DISTI # MSC080SMA120B
Avnet Americas Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 - Rail/Tube (Alt: MSC080SMA120B) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 1 $12.8000
  • 10 $11.8000
  • 100 $10.2700
$10.2700 / $12.8000 Buy Now
NAC FG, SIC MOSFET, TO-247 RoHS: Compliant Min Qty: 60 Package Multiple: 30 Container: Tube 0
  • 1 $11.2600
  • 100 $10.2100
  • 500 $9.5700
  • 1,000 $9.3400
$9.3400 / $11.2600 Buy Now
DISTI # MSC080SMA120B
Avnet Silica Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 (Alt: MSC080SMA120B) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 1 Weeks, 5 Days Silica - 0
Buy Now
DISTI # MSC080SMA120B
EBV Elektronik Silicon Carbide Power MOSFET N-Channel 1200V 30A 3-Pin TO-247 (Alt: MSC080SMA120B) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 1 Weeks, 4 Days EBV - 0
Buy Now
Master Electronics MOSFET - N-Channel - SiCFET (Silicon Carbide) - 1200V - 37A - 20V Rds On - 100mOhm @ 15A, 20V Rds On (Max) @ Id, Vgs - 200W - TO-247-3 Package. 120 In Stock
  • 5 $12.7400
  • 30 $11.6300
  • 60 $11.5700
  • 120 $10.0200
  • 270 $9.9700
  • 510 $9.9200
  • 1,020 $9.8700
$9.8700 / $12.7400 Buy Now

Part Details for MSC080SMA120B

MSC080SMA120B CAD Models

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MSC080SMA120B Part Data Attributes

MSC080SMA120B Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
MSC080SMA120B Microchip Technology Inc Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-247, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 10 Weeks
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 37 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 9 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 91 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for MSC080SMA120B

This table gives cross-reference parts and alternative options found for MSC080SMA120B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC080SMA120B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor MSC080SMA120B vs SCT2080KE
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor MSC080SMA120B vs SCT2080KEGC11
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor MSC080SMA120B vs SCT3080KLHRC11
Part Number Description Manufacturer Compare
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor MSC080SMA120B vs SCT3080KLHRC11
S2301 Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor MSC080SMA120B vs S2301
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor MSC080SMA120B vs SCT2080KE
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor MSC080SMA120B vs SCT2080KEGC11

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