There are no models available for this part yet.
Overview of MTM10N06E by Motorola Semiconductor Products
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Industrial Automation
CAD Models for MTM10N06E by Motorola Semiconductor Products
Part Data Attributes for MTM10N06E by Motorola Semiconductor Products
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
MOTOROLA INC
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
10 A
|
Drain-source On Resistance-Max
|
0.2 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
100 pF
|
JEDEC-95 Code
|
TO-204AA
|
JESD-30 Code
|
O-MBFM-P2
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
METAL
|
Package Shape
|
ROUND
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
75 W
|
Power Dissipation-Max (Abs)
|
75 W
|
Pulsed Drain Current-Max (IDM)
|
28 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
PIN/PEG
|
Terminal Position
|
BOTTOM
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
110 ns
|
Turn-on Time-Max (ton)
|
170 ns
|
Alternate Parts for MTM10N06E
This table gives cross-reference parts and alternative options found for MTM10N06E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTM10N06E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
RFM15N05 | 15A, 50V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | MTM10N06E vs RFM15N05 |
IRF123 | Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | MTM10N06E vs IRF123 |
IRF121 | 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | MTM10N06E vs IRF121 |
IRF121 | Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | MTM10N06E vs IRF121 |
IRF121 | Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | MTM10N06E vs IRF121 |
RFM15N05 | Power Field-Effect Transistor, 15A I(D), 50V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | MTM10N06E vs RFM15N05 |
IRF123 | 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | MTM10N06E vs IRF123 |
IRF121 | 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | MTM10N06E vs IRF121 |
IRF123 | 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | MTM10N06E vs IRF123 |