Part Details for NVHL080N120SC1A by onsemi
Overview of NVHL080N120SC1A by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for NVHL080N120SC1A
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
82AH7673
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Newark | Mosfet, N-Ch, 1.2Kv, 31A, To-247 Rohs Compliant: Yes |Onsemi NVHL080N120SC1A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 450 |
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$18.8100 / $28.3800 | Buy Now |
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DISTI #
5556-NVHL080N120SC1A-ND
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DigiKey | SICFET N-CH 1200V 31A TO247-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
890 In Stock |
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$18.0970 / $27.2900 | Buy Now |
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DISTI #
NVHL080N120SC1A
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Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L - Rail/Tube (Alt: NVHL080N120SC1A) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube | 4508550 Factory Stock |
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RFQ | |
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DISTI #
863-NVHL080N120SC1A
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Mouser Electronics | MOSFET SIC MOS TO247-3L 80MOHM 1200V RoHS: Compliant | 0 |
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$10.3300 / $14.9600 | Order Now |
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Future Electronics | Single N-Channel 1200 V 33 A 80 mOhm 110 nC SMT SCI Power Mosfet - D2PAK−7L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
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$20.8000 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 33 A 80 mOhm 110 nC SMT SCI Power Mosfet - D2PAK−7L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
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$20.8000 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 33 A 80 mOhm 110 nC SMT SCI Power Mosfet - D2PAK−7L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
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$20.8000 | Buy Now |
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Rochester Electronics | NVHL080N - MOSFET - SiC Power, Single N-Channel 1200 V, 80 m, 31 A RoHS: Compliant Status: Active Min Qty: 1 | 2924 |
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$8.7500 / $10.3000 | Buy Now |
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DISTI #
NVHL080N120SC1A
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Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L - Rail/Tube (Alt: NVHL080N120SC1A) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube | 4508550 Factory Stock |
|
RFQ | |
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DISTI #
NVHL080N120SC1A
|
Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L - Rail/Tube (Alt: NVHL080N120SC1A) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube | 4508550 Factory Stock |
|
RFQ |
Part Details for NVHL080N120SC1A
NVHL080N120SC1A CAD Models
NVHL080N120SC1A Part Data Attributes
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NVHL080N120SC1A
onsemi
Buy Now
Datasheet
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Compare Parts:
NVHL080N120SC1A
onsemi
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 340CX | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 67 Weeks | |
| Date Of Intro | 2020-04-22 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.5 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 178 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for NVHL080N120SC1A
This table gives cross-reference parts and alternative options found for NVHL080N120SC1A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVHL080N120SC1A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SCT3080KLHRC11 | Power Field-Effect Transistor, | ROHM Semiconductor | NVHL080N120SC1A vs SCT3080KLHRC11 |
| S2301 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE | ROHM Semiconductor | NVHL080N120SC1A vs S2301 |
| SCT2080KE | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | NVHL080N120SC1A vs SCT2080KE |
| SCT2080KEGC11 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | NVHL080N120SC1A vs SCT2080KEGC11 |