-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
04X6731
|
Newark | Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Product Range:- Rohs Compliant: Yes |Rohm SCH2080KEC Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
Ameya Holding Limited | Min Qty: 1 | 2-Authorized Distributor |
|
$36.3800 | Buy Now |
DISTI #
2345464
|
element14 Asia-Pacific | MOSFET, 1200V, 40A, SIC, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$33.8537 / $42.3171 | Buy Now |
DISTI #
2345464
|
Farnell | MOSFET, 1200V, 40A, SIC, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 32 Weeks, 1 Days Container: Each | 0 |
|
$20.2586 / $29.5411 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SCH2080KEC
ROHM Semiconductor
Buy Now
Datasheet
|
Compare Parts:
SCH2080KEC
ROHM Semiconductor
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.117 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 179 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SCH2080KEC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCH2080KEC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SCT2080KE | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | SCH2080KEC vs SCT2080KE |
SCT2080KEGC11 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | SCH2080KEC vs SCT2080KEGC11 |
SCT3080KLHRC11 | Power Field-Effect Transistor, | ROHM Semiconductor | SCH2080KEC vs SCT3080KLHRC11 |