Datasheets
SCH2080KEC by: ROHM Semiconductor

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for SCH2080KEC by ROHM Semiconductor

Overview of SCH2080KEC by ROHM Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SCH2080KEC

Part # Distributor Description Stock Price Buy
DISTI # 04X6731
Newark Mosfet, N Channel, 1.2Kv, 35A, 0R08, To-247-3, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Product Range:- Rohs Compliant: Yes |Rohm SCH2080KEC Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Ameya Holding Limited   Min Qty: 1 2-Authorized Distributor
  • 1 $36.3800
$36.3800 Buy Now
DISTI # 2345464
element14 Asia-Pacific MOSFET, 1200V, 40A, SIC, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $42.3171
  • 5 $39.0184
  • 10 $35.6683
  • 50 $34.9704
  • 100 $33.8537
$33.8537 / $42.3171 Buy Now
DISTI # 2345464
Farnell MOSFET, 1200V, 40A, SIC, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 32 Weeks, 1 Days Container: Each 0
  • 1 $29.5411
  • 5 $24.4733
  • 10 $21.9520
  • 50 $20.2586
$20.2586 / $29.5411 Buy Now

Part Details for SCH2080KEC

SCH2080KEC CAD Models

SCH2080KEC Part Data Attributes

SCH2080KEC ROHM Semiconductor
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SCH2080KEC ROHM Semiconductor Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.117 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 179 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SCH2080KEC

This table gives cross-reference parts and alternative options found for SCH2080KEC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCH2080KEC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCH2080KEC vs SCT2080KE
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor SCH2080KEC vs SCT2080KEGC11
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor SCH2080KEC vs SCT3080KLHRC11
Part Number Description Manufacturer Compare
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor SCH2080KEC vs SCT3080KLHRC11
S2301 Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor SCH2080KEC vs S2301
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor SCH2080KEC vs SCT2080KE
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor SCH2080KEC vs SCT2080KEGC11

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