Part Details for SI5433BDC-T1-E3 by Vishay Intertechnologies
Overview of SI5433BDC-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI5433BDC-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SMC-SI5433BDC-T1-E3
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Sensible Micro Corporation | Trans Msft P-Ch 20V 1206- RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 1119 Container: Cut Tape | 50 |
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$0.2642 / $0.3138 | RFQ |
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Chip 1 Exchange | INSTOCK | 2794 |
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RFQ | |
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DISTI #
1497626
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Farnell | MOSFET, P, 1206 RoHS: Compliant Min Qty: 5 Lead time: 21 Weeks, 1 Days Container: Each | 0 |
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$0.3300 / $0.6372 | Buy Now |
Part Details for SI5433BDC-T1-E3
SI5433BDC-T1-E3 CAD Models
SI5433BDC-T1-E3 Part Data Attributes:
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SI5433BDC-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI5433BDC-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, 1206-8, CHIPFET-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | LEAD FREE, 1206-8, CHIPFET-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.8 A | |
| Drain-source On Resistance-Max | 0.037 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI5433BDC-T1-E3
This table gives cross-reference parts and alternative options found for SI5433BDC-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI5433BDC-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI5441BDC-T1-GE3 | Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1206-8, CHIPFET-8 | Vishay Intertechnologies | SI5433BDC-T1-E3 vs SI5441BDC-T1-GE3 |
| SI5433BDC-T1-E3 | TRANSISTOR 4800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 1206-8, CHIPFET-8, FET General Purpose Small Signal | Vishay Siliconix | SI5433BDC-T1-E3 vs SI5433BDC-T1-E3 |
| SI5457DC-T1-GE3 | Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8 | Vishay Siliconix | SI5433BDC-T1-E3 vs SI5457DC-T1-GE3 |
| NTHS5443T1G | 3600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8 | Rochester Electronics LLC | SI5433BDC-T1-E3 vs NTHS5443T1G |
| NTHS5443T1G | Single P-Channel ChipFET™ Power MOSFET -20V -4.9A 65mΩ, ChipFET, 3000-REEL | onsemi | SI5433BDC-T1-E3 vs NTHS5443T1G |
| SI5433DC-T1-E3 | Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8 | Vishay Siliconix | SI5433BDC-T1-E3 vs SI5433DC-T1-E3 |
| NTHS5443T1 | 3600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, CASE 1206A-03, CHIPFET-8 | onsemi | SI5433BDC-T1-E3 vs NTHS5443T1 |
| SI5441DC | Transistor | Vishay Siliconix | SI5433BDC-T1-E3 vs SI5441DC |
| SI5441BDC-T1-GE3 | TRANSISTOR 4400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal | Vishay Siliconix | SI5433BDC-T1-E3 vs SI5441BDC-T1-GE3 |
| SI5441DC-T1-E3 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8 | Vishay Intertechnologies | SI5433BDC-T1-E3 vs SI5441DC-T1-E3 |