Parametric results for: Varactors

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Sorted By: Diode Type
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MA46454A
TE Connectivity
Check for Price Transferred 1.5 pF GALLIUM ARSENIDE 22 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 5 % 3.8 VERY HIGH FREQUENCY TO KA BAND 3000 HYPERABRUPT Not Qualified O-CEMW-N2 200 °C -65 °C 2 CERAMIC, METAL-SEALED COFIRED ROUND MICROWAVE NO LEAD END TYCO ELECTRONICS M/A-COM O-CEMW-N2 2 unknown EAR99 8541.10.00.80
1N5445CCHIP
API Technologies Corp
Check for Price Obsolete 15 pF 20 nA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 GOOD Q 2 % 2.6 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 400 25 V ABRUPT Not Qualified X-XUUC-N 175 °C UNSPECIFIED UNSPECIFIED UNCASED CHIP NO LEAD UPPER API TECHNOLOGIES CORP X-XUUC-N compliant EAR99 8541.10.00.40
ML48703B-95
TE Connectivity
Check for Price Transferred GALLIUM ARSENIDE 15 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 MILLIMETER WAVE BAND ABRUPT Not Qualified O-CEMW-N2 150 °C -65 °C CATHODE 2 CERAMIC, METAL-SEALED COFIRED ROUND MICROWAVE NO LEAD END TYCO ELECTRONICS M/A-COM O-CEMW-N2 unknown EAR99 8541.10.00.80
TX-KV4803D
Lockheed Martin Microwave
Check for Price Obsolete 10 pF 5 nA 500 mW SILICON 110 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 HIGH RELIABILITY 1 % 3.82 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 100 100 V ABRUPT Not Qualified O-LALF-W2 DO-14 150 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL LOCKHEED MARTIN MICROWAVE O-LALF-W2 unknown EAR99 8541.10.00.80
BB901T/R
NXP Semiconductors
Check for Price Obsolete 1.055 pF 0.01 pA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 12 VERY HIGH FREQUENCY 28 V Not Qualified R-PDSO-G3 85 °C 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL NXP SEMICONDUCTORS compliant EAR99 8541.10.00.80
HA1715A-2%
API Technologies Corp
Check for Price Active 15 pF 20 nA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 2 % 7 850 25 V HYPERABRUPT Not Qualified O-CEMW-N2 2 CERAMIC, METAL-SEALED COFIRED ROUND MICROWAVE NO LEAD END API TECHNOLOGIES CORP O-CEMW-N2 compliant EAR99 8541.10.00.80
TXB-GC1502-15
Lockheed Martin Microwave
Check for Price Obsolete 1.2 pF 20 nA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 HIGH RELIABILITY 10 % 3.4 X BAND 3800 25 V ABRUPT Not Qualified O-LALF-W2 150 °C -55 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL LOCKHEED MARTIN MICROWAVE O-LALF-W2 unknown EAR99 8541.10.00.80
ML4311-276
TE Connectivity
Check for Price Obsolete SILICON 25 V VARIABLE CAPACITANCE DIODE YES 2.3 ABRUPT Not Qualified O-CXMW-G2 2 CERAMIC, METAL-SEALED COFIRED ROUND MICROWAVE GULL WING UNSPECIFIED TYCO ELECTRONICS M/A-COM O-CXMW-G2 unknown EAR99 8541.10.00.80
CVH2030-26-247-001
Skyworks Solutions Inc
Check for Price No No Obsolete 29.85 pF 250 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 4.4 600 ABRUPT Not Qualified O-CEMW-N2 NOT SPECIFIED NOT SPECIFIED 2 CERAMIC, METAL-SEALED COFIRED ROUND MICROWAVE NO LEAD END SKYWORKS SOLUTIONS INC O-CEMW-N2 2 unknown EAR99 8541.10.00.80
MSV1204-14-001
Cobham Semiconductor Solutions
Check for Price Transferred VARIABLE CAPACITANCE DIODE AEROFLEX COLORADO SPRINGS unknown EAR99