Parametric results for: ACTF552B under Flash Memories

All Filters Access Time-Max Additional Feature Alternate Memory Width Command User Interface Data Polling Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (5)

60 ns 66 70 ns 68 90 ns 72 120 ns 72 150 ns 72

Min (ns) - Max (ns)

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100K ERASE/PROGRAM CYCLES 30 USER CONFIGURABLE AS 2M X 8 33

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16 33

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YES 150

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YES 300

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100000.0 Write/Erase Cycles 150

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R-CDFP-F36 6 R-CDMA-F32 10 R-CDMA-G32 10 R-CDMA-T32 10 R-GDIP-T32 6 R-XDFP-F32 45 R-XDIP-T32 45 R-XDSO-G32 45 S-CPGA-P66 15 S-CQFP-F68 8 S-CQMA-G68 10 S-XPGA-P66 95 S-XQFP-G68 45

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e0 24

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23.368 mm 6 39.624 mm 8 42.418 mm 6

Min (mm) - Max (mm)

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Manufacturer (4)

Cobham Advanced Electronic Solutions 150 Cobham PLC 160 Cobham Power Products 40 Cobham Semiconductor Solutions 59

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Memory Density (2)

4.1943 Mbit 177 16.7772 Mbit 173

Min (bit) - Max (bit)

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FLASH 147 FLASH MODULE 203

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Memory Width (2)

8 177 32 173

Min - Max

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1.0 75

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32 150 8 150

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32 171 36 6 66 110 68 63

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524.288 k 350

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512000.0 350

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ASYNCHRONOUS 75

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70.0 °C 60 85.0 °C 60 125.0 °C 230

Min (°C) - Max (°C)

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-55.0 °C 230 -40.0 °C 60 0.0 °C 60

Min (°C) - Max (°C)

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Organization (2)

512KX32 173 512KX8 177

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3-STATE 22

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CERAMIC 275 CERAMIC, GLASS-SEALED 6 CERAMIC, METAL-SEALED COFIRED 69

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DFP 56 DIP 56 PGA 110 QFF 8 QFP 50 SOP 50

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DIP32,.6 50 FL32,.4 50 PGA66,11X11 100 QFP68,.99SQ,50 50 SOP32,.5 50

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RECTANGULAR 177 SQUARE 173

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FLATPACK 104 GRID ARRAY 110 IN-LINE 51 MICROELECTRONIC ASSEMBLY 40 SMALL OUTLINE 45

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Sector Size (2)

16K 150 64K 150

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Supply Voltage-Nom (Vsup) (1)

5 V 350

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