Parametric results for: DTC114E- under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BAIS RESISTOR RATIO IS 1 4 BUILT IN BIAS RESISTANCE RATIO IS 0.47 3 BUILT IN BIAS RESISTANCE RATIO IS 1 84 BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY 4 BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY 2 BUILT IN BIAS RESISTOR RATIO 1 3 BUILT IN BIAS RESISTOR RATIO IS 1 19 BUILT IN BIAS RESISTOR RATIO IS 1, EUROPEAN PART NUMBER 3 BUILT IN BIAS RESISTOR RATIO IS 1.0 2 BUILT-IN BIAS RESISTANCE RATIO IS 1 1 BUILT-IN BIAS RESISTOR RATIO 1 4 BUILT-IN BIAS RESISTOR RATIO IS 1 71 BUILT-IN BIAS RESISTOR RATIO IS 1, DIGITAL 1 BUILT-IN BIAS RESISTOR RATIO IS 1, HIGH RELIABILITY 1 BUILT-IN BIAS RESISTOR RATIO IS 1.0 2 DIGITAL, BUILT IN BIAS RESISTOR RATIO 1 4 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 8 HIGH RELIABILITY 2

332 hits Apply

COLLECTOR 13

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Collector Current-Max (IC) (2)

50 mA 64 100 mA 185

Min (A) - Max (A)

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2.5 pF 6 3.5 pF 11

Min (pF) - Max (pF)

332 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 187

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Configuration (2)

SINGLE WITH BUILT-IN FET AND RESISTOR 1 SINGLE WITH BUILT-IN RESISTOR 217

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DC Current Gain-Min (hFE) (5)

24.0 3 30.0 224 35.0 23 90.0 2 3.0E8 1

Min - Max

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TO-236 7 TO-236AB 14 TO-92 21

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O-PBCY-T3 20 O-PSIP-T3 1 R-PBCC-N3 8 R-PDSO-F3 17 R-PDSO-G3 149 R-PDSO-N3 4 R-PSIP-T3 19

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e0 34 e1 16 e2 2 e3 105 e4 2

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Manufacturer (24)

Comchip Technology Corporation Ltd 2 Diodes Incorporated 21 Galaxy Microelectronics 9 Galaxy Semi-Conductor Co Ltd 3 Jiangsu Changjiang Electronics Technology Co Ltd 6 LRC Leshan Radio Co Ltd 15 Micro Commercial Components 26 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Nexperia 40 NXP Semiconductors 42 onsemi 14 Philips Semiconductors 7 Rectron Semiconductor 7 Rochester Electronics LLC 2 ROHM Semiconductor 55 Secos Corporation 11 SY Sinyork Co Ltd 2 Taiwan Semiconductor 25 Tak Cheong Electronics (Holdings) Co Ltd 1 Toshiba America Electronic Components 3 Unisonic Technologies Co Ltd 29 WEITRON INTERNATIONAL CO., LTD. 5 Yangzhou Yangjie Electronics Co Ltd 5

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1 94 NOT APPLICABLE 1 NOT SPECIFIED 2

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Number of Elements (1)

1 257

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Number of Terminals (1)

3 218

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150.0 °C 109

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-65.0 °C 6 -55.0 °C 8

Min (°C) - Max (°C)

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PLASTIC/EPOXY 218

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RECTANGULAR 197 ROUND 21

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CHIP CARRIER 8 CYLINDRICAL 20 IN-LINE 20 SMALL OUTLINE 170

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Active 151 Contact Manufacturer 22 End Of Life 4 Not Recommended 8 Obsolete 115 Transferred 32

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No 8 Yes 46

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235 5 240 3 260 96 NOT SPECIFIED 93

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Polarity/Channel Type (2)

NPN 253 PNP 2

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100 mW 1 150 mW 8 200 mW 16 300 mW 2

Min (W) - Max (W)

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100 mW 1 150 mW 21 200 mW 48 250 mW 20 300 mW 18 350 mW 4 500 mW 2 600 mW 2

Min (W) - Max (W)

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Surface Mount (2)

NO 49 YES 209

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Transition Frequency-Nom (fT) (3)

100 MHz 13 230 MHz 21 250 MHz 129

Min (MHz) - Max (MHz)

332 hits Apply