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M12L128324A-7BG2E
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 134.2177 Mbit | 32 | 4MX32 | 3.3 V | 6 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B90 | 70 °C | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | LFBGA, | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||||||
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M12L128168A-5TVAG2N
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | 105 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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M12L128168A-6BG2S
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 2 mA | 200 µA | 3.6 V | 3 V | CMOS | S-PBGA-B54 | 70 °C | 54 | PLASTIC/EPOXY | VFBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1 mm | 8 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | , | unknown | EAR99 | 8542.32.00.02 | 2017-08-18 | |||||||||||||
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M12L128168A-5TG
Elite Semiconductor Memory Technology Inc
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Check for Price | Contact Manufacturer | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 4.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, | unknown | EAR99 | 8542.32.00.02 | TSOP2 | 54 | ||||||||||||||||||
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M12L128168A-6TG
Elite Semiconductor Memory Technology Inc
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Check for Price | Yes | Contact Manufacturer | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 160 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, TSOP54,.46,32 | unknown | EAR99 | 8542.32.00.02 | TSOP2 | 54 | ||||||||
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M12L128168A-7T
Elite Semiconductor Memory Technology Inc
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Check for Price | No | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 8000000 | 8.3886 M | 3-STATE | 1,2,4,8,FP | 2 mA | 180 µA | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e0 | 70 °C | 54 | PLASTIC/EPOXY | TSOP | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 800 µm | DUAL | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP, TSOP54,.46,32 | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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M12L128168A-6T
Elite Semiconductor Memory Technology Inc
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Check for Price | No | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | SYNCHRONOUS DRAM | COMMON | 1,2,4,8 | 8000000 | 8.3886 M | 3-STATE | 1,2,4,8,FP | 2 mA | 210 µA | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e0 | 70 °C | 54 | PLASTIC/EPOXY | TSOP | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 800 µm | DUAL | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP, TSOP54,.46,32 | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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M12L128324A-6BIG
Elite Semiconductor Memory Technology Inc
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Check for Price | Contact Manufacturer | 134.2177 Mbit | 32 | 4MX32 | 3.3 V | 5.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 13 mm | 8 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | LFBGA, | unknown | EAR99 | 8542.32.00.02 | BGA | 90 | |||||||||||||||
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M12L128324A-7TIG
Elite Semiconductor Memory Technology Inc
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Check for Price | Contact Manufacturer | 134.2177 Mbit | 32 | 4MX32 | 3.3 V | 6 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G86 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 86 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSSOP, | unknown | EAR99 | 8542.32.00.02 | TSOP2 | 86 | |||||||||||||||
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M12L128168A-7TG2S
Elite Semiconductor Memory Technology Inc
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Check for Price | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 2 mA | 190 µA | 3.6 V | 3 V | CMOS | R-PDSO-G54 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | , | unknown | EAR99 | 8542.32.00.02 | 2017-08-18 |