Parametric results for: M12L12 under DRAMs

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Manufacturer Part Number: m12l12
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M12L128324A-7BG2E
Elite Semiconductor Memory Technology Inc
Check for Price Active 134.2177 Mbit 32 4MX32 3.3 V 6 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PBGA-B90 70 °C 90 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.4 mm 13 mm 8 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC LFBGA, unknown EAR99 8542.32.00.02
M12L128168A-5TVAG2N
Elite Semiconductor Memory Technology Inc
Check for Price Active 134.2177 Mbit 16 8MX16 3.3 V 5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G54 105 °C -40 °C NOT SPECIFIED NOT SPECIFIED 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, unknown EAR99 8542.32.00.02
M12L128168A-6BG2S
Elite Semiconductor Memory Technology Inc
Check for Price Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS YES 1,2,4,8,FP 2 mA 200 µA 3.6 V 3 V CMOS S-PBGA-B54 70 °C 54 PLASTIC/EPOXY VFBGA BGA54,9X9,32 SQUARE GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1 mm 8 mm 8 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC , unknown EAR99 8542.32.00.02 2017-08-18
M12L128168A-5TG
Elite Semiconductor Memory Technology Inc
Check for Price Contact Manufacturer 134.2177 Mbit 16 8MX16 3.3 V 4.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified 70 °C 54 PLASTIC/EPOXY TSOP2 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, unknown EAR99 8542.32.00.02 TSOP2 54
M12L128168A-6TG
Elite Semiconductor Memory Technology Inc
Check for Price Yes Contact Manufacturer 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 166 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 160 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, TSOP54,.46,32 unknown EAR99 8542.32.00.02 TSOP2 54
M12L128168A-7T
Elite Semiconductor Memory Technology Inc
Check for Price No Obsolete 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 143 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 3-STATE 1,2,4,8,FP 2 mA 180 µA CMOS COMMERCIAL R-PDSO-G54 Not Qualified e0 70 °C 54 PLASTIC/EPOXY TSOP TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP, TSOP54,.46,32 unknown EAR99 8542.32.00.02
M12L128168A-6T
Elite Semiconductor Memory Technology Inc
Check for Price No Obsolete 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 166 MHz 4096 SYNCHRONOUS DRAM COMMON 1,2,4,8 8000000 8.3886 M 3-STATE 1,2,4,8,FP 2 mA 210 µA CMOS COMMERCIAL R-PDSO-G54 Not Qualified e0 70 °C 54 PLASTIC/EPOXY TSOP TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP, TSOP54,.46,32 unknown EAR99 8542.32.00.02
M12L128324A-6BIG
Elite Semiconductor Memory Technology Inc
Check for Price Contact Manufacturer 134.2177 Mbit 32 4MX32 3.3 V 5.5 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PBGA-B90 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 90 PLASTIC/EPOXY LFBGA RECTANGULAR GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.4 mm 13 mm 8 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC LFBGA, unknown EAR99 8542.32.00.02 BGA 90
M12L128324A-7TIG
Elite Semiconductor Memory Technology Inc
Check for Price Contact Manufacturer 134.2177 Mbit 32 4MX32 3.3 V 6 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 4000000 4.1943 M SYNCHRONOUS YES 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G86 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 86 PLASTIC/EPOXY TSSOP RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES GULL WING 500 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSSOP, unknown EAR99 8542.32.00.02 TSOP2 86
M12L128168A-7TG2S
Elite Semiconductor Memory Technology Inc
Check for Price Active 134.2177 Mbit 16 8MX16 3.3 V 5.4 ns 143 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS YES 1,2,4,8,FP 2 mA 190 µA 3.6 V 3 V CMOS R-PDSO-G54 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC , unknown EAR99 8542.32.00.02 2017-08-18