Findchips: Parametric Search Results for M93C76-RBN


Select Parts		Part Number

		M93C76-RBN6G STMicroelectronics
		M93C76-RBN6 STMicroelectronics
		M93C76-RBN5 STMicroelectronics
		M93C76-RBN6P STMicroelectronics
		M93C76-RBN1 STMicroelectronics

				Most Relevant					Technical																				Compliance			Operating Conditions		Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Clock Frequency-Max (fCLK)	Memory IC Type	Additional Feature	Alternate Memory Width	Data Retention Time-Min	Endurance	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Serial Bus Type	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Write Cycle Time-Max (tWC)	Write Protection	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Part Package Code	Package Description	Pin Count	ECCN Code	HTS Code

Check for Price

Yes

Obsolete

8.192 kbit

512X16

5 V

1 MHz

EEPROM

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

SERIAL

MICROWIRE

2 µA

5.5 V

1.8 V

CMOS

INDUSTRIAL

10 ms

SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

DIP

ROHS COMPLIANT, PLASTIC, DIP-8

EAR99

8542.32.00.51

Check for Price

Obsolete

8.192 kbit

512X16

5 V

1 MHz

EEPROM

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

3-STATE

SERIAL

MICROWIRE

2 µA

5.5 V

1.8 V

CMOS

INDUSTRIAL

10 ms

SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Tin/Lead (Sn60Pb40)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

DIP

PLASTIC, DIP-8

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

8.192 kbit

512X16

2.5 V

500 kHz

EEPROM

CONFIGURABLE AS 512 X 16

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

SERIAL

MICROWIRE

5 µA

2 µA

3.6 V

1.8 V

CMOS

OTHER

10 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-20 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.9 mm

9.55 mm

7.62 mm

DIP

PLASTIC, SDIP-8

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

8.192 kbit

512X16

5 V

1 MHz

EEPROM

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

SERIAL

MICROWIRE

2 µA

5.5 V

1.8 V

CMOS

INDUSTRIAL

10 ms

SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

DIP

ROHS COMPLIANT, PLASTIC, DIP-8

EAR99

8542.32.00.51

Check for Price

Yes

Obsolete

8.192 kbit

512X16

2.5 V

500 kHz

EEPROM

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

3-STATE

SERIAL

MICROWIRE

5 µA

2 µA

3.6 V

1.8 V

CMOS

COMMERCIAL

10 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.9 mm

9.55 mm

7.62 mm

DIP

PLASTIC, SDIP-8

EAR99

8542.32.00.51

Compare

M93C76-RBN6G

STMicroelectronics

Check for Price

Yes

Obsolete

8.192 kbit

512X16

5 V

1 MHz

EEPROM

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

SERIAL

MICROWIRE

2 µA

5.5 V

1.8 V

CMOS

INDUSTRIAL

10 ms

SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

DIP

ROHS COMPLIANT, PLASTIC, DIP-8

EAR99

8542.32.00.51

M93C76-RBN6

STMicroelectronics

Check for Price

Obsolete

8.192 kbit

512X16

5 V

1 MHz

EEPROM

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

3-STATE

SERIAL

MICROWIRE

2 µA

5.5 V

1.8 V

CMOS

INDUSTRIAL

10 ms

SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Tin/Lead (Sn60Pb40)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

DIP

PLASTIC, DIP-8

EAR99

8542.32.00.51

M93C76-RBN5

STMicroelectronics

Check for Price

Yes

Obsolete

8.192 kbit

512X16

2.5 V

500 kHz

EEPROM

CONFIGURABLE AS 512 X 16

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

SERIAL

MICROWIRE

5 µA

2 µA

3.6 V

1.8 V

CMOS

OTHER

10 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-20 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.9 mm

9.55 mm

7.62 mm

DIP

PLASTIC, SDIP-8

EAR99

8542.32.00.51

M93C76-RBN6P

STMicroelectronics

Check for Price

Yes

Obsolete

8.192 kbit

512X16

5 V

1 MHz

EEPROM

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

SERIAL

MICROWIRE

2 µA

5.5 V

1.8 V

CMOS

INDUSTRIAL

10 ms

SOFTWARE

R-PDIP-T8

Not Qualified

85 °C

-40 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

5.33 mm

9.27 mm

7.62 mm

DIP

ROHS COMPLIANT, PLASTIC, DIP-8

EAR99

8542.32.00.51

M93C76-RBN1

STMicroelectronics

Check for Price

Yes

Obsolete

8.192 kbit

512X16

2.5 V

500 kHz

EEPROM

1000000 Write/Erase Cycles

512

512 words

SYNCHRONOUS

3-STATE

SERIAL

MICROWIRE

5 µA

2 µA

3.6 V

1.8 V

CMOS

COMMERCIAL

10 ms

HARDWARE/SOFTWARE

R-PDIP-T8

Not Qualified

70 °C

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

THROUGH-HOLE

2.54 mm

DUAL

5.9 mm

9.55 mm

7.62 mm

DIP

PLASTIC, SDIP-8

EAR99

8542.32.00.51

Parametric results for: M93C76-RBN under EEPROMs