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SST32HF1681-70-4E-LS
Silicon Storage Technology
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Check for Price | No | Obsolete | 16.7772 Mbit | 16 | 1MX16 | 3 V | MEMORY CIRCUIT | SRAM IS ORGANIZED AS 256K X 16 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | COMMERCIAL EXTENDED | R-PBGA-B62 | Not Qualified | 85 °C | -20 °C | NOT SPECIFIED | NOT SPECIFIED | 62 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | SILICON STORAGE TECHNOLOGY INC | BGA | LFBGA, | 62 | unknown | EAR99 | 8542.32.00.71 | |||||||||||
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MT28C256532W18SFT-F70P85TTWT
Micron Technology Inc
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Check for Price | Obsolete | 134.2177 Mbit | 16 | 8MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B88 | Not Qualified | e1 | 85 °C | -25 °C | 88 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 9 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 88 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||
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AM41PDS3228DB11IT
Spansion
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Check for Price | No | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 2 V | 110 ns | MEMORY CIRCUIT | SRAM IS ORGANISED AS 512K X 16/1M X 8 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 30 µA | 2.2 V | 1.8 V | CMOS | INDUSTRIAL | R-PBGA-B73 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 260 | 73 | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | SPANSION INC | BGA | 8 X 11.60 MM, FBGA-73 | 73 | not_compliant | EAR99 | 8542.32.00.71 | ||||
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AM42DL640AG71IT
Spansion
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3 V | 70 ns | MEMORY CIRCUIT | STATIC RAM IS ORGANISED AS 1M X 16; FLASH CAN ALSO BE ORGANISED AS 8M X 8 | FLASH+SRAM | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 8 µA | 30 µA | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B73 | Not Qualified | e0 | 85 °C | -40 °C | 73 | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | SPANSION INC | BGA | LFBGA, BGA73,10X12,32 | 73 | compliant | EAR99 | 8542.32.00.71 | ||||||
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MT28C128532W30DFW-F70P85BBWT
Micron Technology Inc
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Check for Price | Obsolete | 67.1089 Mbit | 16 | 4MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B77 | Not Qualified | e1 | 85 °C | -25 °C | 77 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 77 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||
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MT28C128532W18EBW-F706-P706KBTWT
Micron Technology Inc
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Check for Price | Obsolete | 67.1089 Mbit | 4MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 1.95 V | 1.7 V | OTHER | R-PBGA-B77 | Not Qualified | e1 | 85 °C | -25 °C | 77 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 77 | unknown | |||||||||||||||||
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MT28C128564W18EFW-F705-P706KBBWT
Micron Technology Inc
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Check for Price | Obsolete | 67.1089 Mbit | 16 | 4MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 1.95 V | 1.7 V | OTHER | R-PBGA-B77 | Not Qualified | e1 | 85 °C | -25 °C | 77 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 10 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 77 | unknown | ||||||||||||||||
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MT28C256564W18SFT-F605P85BBWT
Micron Technology Inc
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Check for Price | Obsolete | 134.2177 Mbit | 16 | 8MX16 | MEMORY CIRCUIT | CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B88 | Not Qualified | e1 | 85 °C | -25 °C | 88 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 9 mm | MICRON TECHNOLOGY INC | BGA | LFBGA, | 88 | unknown | EAR99 | 8542.32.00.71 | |||||||||||||
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AM41PDS3224DT10IS
AMD
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 2 V | 100 ns | MEMORY CIRCUIT | SRAM CONFIGURATION IS 512K X 8/256K X 16 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 30 µA | 2.2 V | 1.8 V | CMOS | INDUSTRIAL | R-PBGA-B73 | Not Qualified | e0 | 85 °C | -40 °C | 73 | PLASTIC/EPOXY | LFBGA | BGA73,10X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.4 mm | 11.6 mm | 8 mm | ADVANCED MICRO DEVICES INC | BGA | LFBGA, BGA73,10X12,32 | 73 | compliant | EAR99 | 8542.32.00.71 | |||||||
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HYG0UEG0BF1-6SH0E
SK Hynix Inc
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Check for Price | Active | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | MEMORY CIRCUIT | IT ALSO CONTAINS 512M(64M X 8BIT) NAND FLASH MEMORY OPERATES AT 2.7V NOM SUPPLY | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B149 | 85 °C | -30 °C | 149 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 14 mm | 10 mm | SK HYNIX INC | FBGA-149 | compliant | EAR99 | 8542.32.00.71 |