Parametric results for: an_011 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 6

9 hits Apply

DS Breakdown Voltage-Min (1)

160 V 6

9 hits Apply

Drain Current-Max (ID) (3)

30 mA 6 40 mA 2 50 mA 1

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (1)

350 Ω 6

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

1.5 pF 6

9 hits Apply

R-PDIP-T18 2 R-PDSO-G20 2 S-XUUC-N17 2

9 hits Apply

e0 9

9 hits Apply

Manufacturer (3)

Microchip Technology Inc 4 Supertex Inc 4 Telcom Semiconductor Inc 1

9 hits Apply

Number of Elements (1)

8 6

9 hits Apply

Number of Terminals (3)

17 2 18 2 20 2

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

85.0 °C 1 125.0 °C 1 150.0 °C 7

Min (°C) - Max (°C)

9 hits Apply

PLASTIC/EPOXY 4 UNSPECIFIED 2

9 hits Apply

RECTANGULAR 4 SQUARE 2

9 hits Apply

IN-LINE 2 SMALL OUTLINE 2 UNCASED CHIP 2

9 hits Apply

Active 4 Obsolete 4 Transferred 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

1.4 W 1 1.5 W 1

Min (W) - Max (W)

9 hits Apply

640 mW 1 1.4 W 2 1.5 W 2 2 W 2

Min (W) - Max (W)

9 hits Apply

Surface Mount (2)

NO 5 YES 4

9 hits Apply