NAND01GW3B2BZA1
vs
S34ML01G200TFA003
feature comparison
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
SKYHIGH MEMORY LTD
|
| Part Package Code |
BGA
|
|
| Package Description |
TFBGA,
|
TSOP1-48
|
| Pin Count |
63
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| JESD-30 Code |
R-PBGA-B63
|
R-PDSO-G48
|
| Length |
12 mm
|
18.4 mm
|
| Memory Density |
1073741824 bit
|
1073741824 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
63
|
48
|
| Number of Words |
134217728 words
|
134217728 words
|
| Number of Words Code |
128000000
|
128000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
128MX8
|
128MX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TSSOP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
3 V
|
3 V
|
| Seated Height-Max |
1.05 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
| Terminal Form |
BALL
|
GULL WING
|
| Terminal Pitch |
0.8 mm
|
0.5 mm
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Width |
9.5 mm
|
12 mm
|
| Base Number Matches |
4
|
1
|
| Rohs Code |
|
Yes
|
| Access Time-Max |
|
25 ns
|
| Command User Interface |
|
YES
|
| Data Polling |
|
YES
|
| Data Retention Time-Min |
|
10
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
3
|
| Number of Sectors/Size |
|
1024
|
| Package Equivalence Code |
|
TSSOP48,.8,20
|
| Page Size |
|
2K words
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Ready/Busy |
|
YES
|
| Screening Level |
|
AEC-Q100
|
| Sector Size |
|
128K
|
| Standby Current-Max |
|
0.00005 A
|
| Supply Current-Max |
|
0.03 mA
|
| Terminal Finish |
|
MATTE TIN
|
| Toggle Bit |
|
YES
|
| Type |
|
SLC NAND TYPE
|
| Write Cycle Time-Max (tWC) |
|
0.000025 ms
|
|
|
|
Compare NAND01GW3B2BZA1 with alternatives
Compare S34ML01G200TFA003 with alternatives