W3E64M16S-266SBC
vs
W3E64M16S-266NBC
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MERCURY SYSTEMS INC
|
MICROSEMI CORP
|
| Package Description |
,
|
LBGA,
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.32
|
8542.32.00.32
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| Clock Frequency-Max (fCLK) |
266 MHz
|
|
| I/O Type |
COMMON
|
|
| Interleaved Burst Length |
2,4,8
|
|
| JESD-30 Code |
R-PBGA-B60
|
R-PBGA-B60
|
| Length |
12.5 mm
|
12.5 mm
|
| Memory Density |
1073741824 bit
|
1073741824 bit
|
| Memory IC Type |
DDR1 DRAM
|
DDR DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
60
|
60
|
| Number of Words |
67108864 words
|
67108864 words
|
| Number of Words Code |
64000000
|
64000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
64MX16
|
64MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
LBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY, LOW PROFILE
|
| Seated Height-Max |
2.88 mm
|
1.5 mm
|
| Self Refresh |
YES
|
YES
|
| Sequential Burst Length |
2,4,8
|
|
| Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
10 mm
|
10 mm
|
| Base Number Matches |
3
|
2
|
| Part Package Code |
|
BGA
|
| Pin Count |
|
60
|
| Access Time-Max |
|
0.75 ns
|
| Qualification Status |
|
Not Qualified
|
| Temperature Grade |
|
COMMERCIAL
|
|
|
|
Compare W3E64M16S-266SBC with alternatives
Compare W3E64M16S-266NBC with alternatives