Datasheets
HYB39S512800AT-7.5 by:

Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54

Part Details for HYB39S512800AT-7.5 by Qimonda AG

Overview of HYB39S512800AT-7.5 by Qimonda AG

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Price & Stock for HYB39S512800AT-7.5

Part # Distributor Description Stock Price Buy
Quest Components SDRAM, 64M x 8, 54 Pin, Plastic, TSOP 350
  • 1 $20.0000
  • 84 $11.5000
  • 175 $10.8000
$10.8000 / $20.0000 Buy Now

Part Details for HYB39S512800AT-7.5

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HYB39S512800AT-7.5 Part Data Attributes:

HYB39S512800AT-7.5 Qimonda AG
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HYB39S512800AT-7.5 Qimonda AG Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer QIMONDA AG
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 8
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.003 A
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for HYB39S512800AT-7.5

This table gives cross-reference parts and alternative options found for HYB39S512800AT-7.5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB39S512800AT-7.5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB39S512800ATL-7.5 Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG HYB39S512800AT-7.5 vs HYB39S512800ATL-7.5
HYB39S512800AT-7.5 Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG HYB39S512800AT-7.5 vs HYB39S512800AT-7.5
HYB39S512800AE-7.5 Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, GREEN, PLASTIC, TSOP2-54 Qimonda AG HYB39S512800AT-7.5 vs HYB39S512800AE-7.5
Part Number Description Manufacturer Compare
MT48LC64M8A2P-7ELIT:C Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Micron Technology Inc HYB39S512800AT-7.5 vs MT48LC64M8A2P-7ELIT:C
K4H510838D-VCB00 DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, ROHS COMPLIANT, STSOP2-54 Samsung Semiconductor HYB39S512800AT-7.5 vs K4H510838D-VCB00
K4S510832M-TL1L Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HYB39S512800AT-7.5 vs K4S510832M-TL1L
IS42S86400D-7TL Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSSOP2, 54 PIN Integrated Silicon Solution Inc HYB39S512800AT-7.5 vs IS42S86400D-7TL
MT48LC64M8A2TG-7EIT:C Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc HYB39S512800AT-7.5 vs MT48LC64M8A2TG-7EIT:C
M2V12S30TP-7 Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 Mitsubishi Electric HYB39S512800AT-7.5 vs M2V12S30TP-7
K4S510732C-TL750 Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HYB39S512800AT-7.5 vs K4S510732C-TL750
HM5259805BTD-A6 Synchronous DRAM, 64MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Elpida Memory Inc HYB39S512800AT-7.5 vs HM5259805BTD-A6
K4S510832C-KC1H Synchronous DRAM, 64MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor HYB39S512800AT-7.5 vs K4S510832C-KC1H
DPSD64ME8WKY5-DP-XX55 Synchronous DRAM Module, 64MX8, CMOS, PDSO54, STACKED, TSOP2-54 B&B Electronics Manufacturing Company HYB39S512800AT-7.5 vs DPSD64ME8WKY5-DP-XX55

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