Datasheets
IS42RM32400G-75BLI by: Integrated Silicon Solution Inc

Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90

Part Details for IS42RM32400G-75BLI by Integrated Silicon Solution Inc

Overview of IS42RM32400G-75BLI by Integrated Silicon Solution Inc

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Applications Computing and Data Storage

Price & Stock for IS42RM32400G-75BLI

Part # Distributor Description Stock Price Buy
DISTI # IS42RM32400G-75BLI-ND
DigiKey IC DRAM 128MBIT PAR 90TFBGA Lead time: 10 Weeks Container: Tray Limited Supply - Call
Buy Now
DISTI # SMC-IS42RM32400G-75BLI
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 250
RFQ

Part Details for IS42RM32400G-75BLI

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IS42RM32400G-75BLI Part Data Attributes:

IS42RM32400G-75BLI Integrated Silicon Solution Inc
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IS42RM32400G-75BLI Integrated Silicon Solution Inc Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TFBGA-90
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code DSBGA
Package Description TFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH, ALSO OPERATES AT 2.5V, 1.8V SUPPLY
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
Length 13 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.00001 A
Supply Current-Max 0.11 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for IS42RM32400G-75BLI

This table gives cross-reference parts and alternative options found for IS42RM32400G-75BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42RM32400G-75BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS42RM32400F-75BLI Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 13 X 8 MM, LEAD FREE, MO-207, TFBGA-90 Integrated Silicon Solution Inc IS42RM32400G-75BLI vs IS42RM32400F-75BLI
Part Number Description Manufacturer Compare
MT48LC4M32B2B5-7IT:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc IS42RM32400G-75BLI vs MT48LC4M32B2B5-7IT:G
MT48LC4M32LFF5-75M:G Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 Micron Technology Inc IS42RM32400G-75BLI vs MT48LC4M32LFF5-75M:G
MT48LC4M32B2B5-7ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc IS42RM32400G-75BLI vs MT48LC4M32B2B5-7ES:G
IS42S32400F-6BL Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, TWBGA-90 Integrated Silicon Solution Inc IS42RM32400G-75BLI vs IS42S32400F-6BL
HY57V283220LT-PI Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc IS42RM32400G-75BLI vs HY57V283220LT-PI
HY5V22LF-55I Synchronous DRAM, 4MX32, 5ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 SK Hynix Inc IS42RM32400G-75BLI vs HY5V22LF-55I
K4S283233E-FL600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 Samsung Semiconductor IS42RM32400G-75BLI vs K4S283233E-FL600
HY57V283220LTP-P Synchronous DRAM, 4MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc IS42RM32400G-75BLI vs HY57V283220LTP-P
IS42S32400AL-7TLI Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, LEAD FREE, TSOP2-86 Integrated Silicon Solution Inc IS42RM32400G-75BLI vs IS42S32400AL-7TLI
K4M283233H-HN75T Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor IS42RM32400G-75BLI vs K4M283233H-HN75T

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