Datasheets
IRFU5305 by:

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

Part Details for IRFU5305 by Infineon Technologies AG

Overview of IRFU5305 by Infineon Technologies AG

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Applications Automotive

Part Details for IRFU5305

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IRFU5305 Part Data Attributes:

IRFU5305 Infineon Technologies AG
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IRFU5305 Infineon Technologies AG Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description IPAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFU5305

This table gives cross-reference parts and alternative options found for IRFU5305. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU5305, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFU5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 International Rectifier IRFU5305 vs IRFU5305PBF
AUIRFU5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 International Rectifier IRFU5305 vs AUIRFU5305
AUIRFU5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 Infineon Technologies AG IRFU5305 vs AUIRFU5305
IRFU5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 International Rectifier IRFU5305 vs IRFU5305
Part Number Description Manufacturer Compare
SPU30P06P 30A, 60V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3 Rochester Electronics LLC IRFU5305 vs SPU30P06P
UTT25P06L-TN3-T Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, Unisonic Technologies Co Ltd IRFU5305 vs UTT25P06L-TN3-T
SPU30P06P Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG IRFU5305 vs SPU30P06P
MTB30P06VT4G Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL onsemi IRFU5305 vs MTB30P06VT4G
MTB30P06VT4 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 onsemi IRFU5305 vs MTB30P06VT4
MTB30P06VG TRANSISTOR 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 418B-04, D2PAK-3, FET General Purpose Power onsemi IRFU5305 vs MTB30P06VG
AUIRFU5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 Infineon Technologies AG IRFU5305 vs AUIRFU5305
SPD30P06PGBTMA1 Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IRFU5305 vs SPD30P06PGBTMA1
IRFU5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 International Rectifier IRFU5305 vs IRFU5305PBF
SPD30P06P-E4-E6327 Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG IRFU5305 vs SPD30P06P-E4-E6327

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