Part Details for IRLL014NTR by Infineon Technologies AG
Overview of IRLL014NTR by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLL014NTR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Advanced Process Technology | MOSFET N-CH 55V 2A SOT223 | 1340 |
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RFQ | |
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Win Source Electronics | Advanced Process Technology | MOSFET N-CH 55V 2A SOT223 | 306000 |
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$0.2640 / $0.3960 | Buy Now |
Part Details for IRLL014NTR
IRLL014NTR CAD Models
IRLL014NTR Part Data Attributes:
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IRLL014NTR
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL014NTR
Infineon Technologies AG
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 32 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLL014NTR
This table gives cross-reference parts and alternative options found for IRLL014NTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL014NTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQT13N06TF | Power MOSFET, N-Channel, QFET®, 60 V, 2.8 A, 140 mΩ, SOT-223, 4000-REEL | onsemi | IRLL014NTR vs FQT13N06TF |
| FQT13N06LS62Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRLL014NTR vs FQT13N06LS62Z |
| IRLL014NTRPBF | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4 | Infineon Technologies AG | IRLL014NTR vs IRLL014NTRPBF |
| FQT13N06LL99Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRLL014NTR vs FQT13N06LL99Z |
| FQT13N06L | Small Signal Field-Effect Transistor | onsemi | IRLL014NTR vs FQT13N06L |
| FQT13N06L | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | IRLL014NTR vs FQT13N06L |
| FQT13N06LD84Z | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRLL014NTR vs FQT13N06LD84Z |
| FQT13N06TF | 2800mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-223, 4 PIN | Rochester Electronics LLC | IRLL014NTR vs FQT13N06TF |
| IRLL014NPBF | Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 4 PIN | Infineon Technologies AG | IRLL014NTR vs IRLL014NPBF |
| FQT13N06TF | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | IRLL014NTR vs FQT13N06TF |