Datasheets
MT47H256M8HG-3:A by: Micron Technology Inc

DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60

Part Details for MT47H256M8HG-3:A by Micron Technology Inc

Overview of MT47H256M8HG-3:A by Micron Technology Inc

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Applications Industrial Automation Computing and Data Storage Electronic Manufacturing Renewable Energy Robotics and Drones

Price & Stock for MT47H256M8HG-3:A

Part # Distributor Description Stock Price Buy
DISTI # MT47H256M8HG-3:A
Avnet Americas DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin FBGA Tray - Trays (Alt: MT47H256M8HG-3:A) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tray 0
RFQ
Bristol Electronics   195
RFQ
Quest Components DDR DRAM, 256MX8, 0.45NS, CMOS, PBGA60 15
  • 1 $17.0000
  • 4 $12.7500
$12.7500 / $17.0000 Buy Now
DISTI # MT47H256M8HG-3:A
Avnet Americas DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin FBGA Tray - Trays (Alt: MT47H256M8HG-3:A) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tray 0
RFQ

Part Details for MT47H256M8HG-3:A

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MT47H256M8HG-3:A Part Data Attributes:

MT47H256M8HG-3:A Micron Technology Inc
Buy Now Datasheet
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MT47H256M8HG-3:A Micron Technology Inc DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA, BGA60,9X11,32
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.45 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 14.5 mm
Memory Density 2147483648 bit
Memory IC Type DDR2 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 256MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.012 A
Supply Current-Max 0.34 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 11.5 mm

Alternate Parts for MT47H256M8HG-3:A

This table gives cross-reference parts and alternative options found for MT47H256M8HG-3:A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H256M8HG-3:A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
H5PS2G83MFP-Y5 DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H256M8HG-3:A vs H5PS2G83MFP-Y5
MT47H256M8HG-3L:A DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H256M8HG-3:A vs MT47H256M8HG-3L:A
H5PS2G83MFP-S5 DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H256M8HG-3:A vs H5PS2G83MFP-S5
Part Number Description Manufacturer Compare
H5PS2G83MFP-S5 DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H256M8HG-3:A vs H5PS2G83MFP-S5
MT47H256M8HG-3E:A DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H256M8HG-3:A vs MT47H256M8HG-3E:A
MT47H256M8EB-25EAAT:C DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, FBGA-60 Micron Technology Inc MT47H256M8HG-3:A vs MT47H256M8EB-25EAAT:C
HY5PS1G421M-C4 DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA63, FBGA-63 SK Hynix Inc MT47H256M8HG-3:A vs HY5PS1G421M-C4
MT47H512M4THN-37E:G DDR DRAM, 256MX4, CMOS, PBGA63, 9 X 11.5 MM, LEAD FREE, FBGA-63 Micron Technology Inc MT47H256M8HG-3:A vs MT47H512M4THN-37E:G
MT47H512M4-3:G DDR DRAM, 256MX4, CMOS, PBGA63, 9 X 11.50 MM, LEAD FREE, FBGA-63 Micron Technology Inc MT47H256M8HG-3:A vs MT47H512M4-3:G
MT47H256M8HG-3EL:A DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H256M8HG-3:A vs MT47H256M8HG-3EL:A
H5PS2G83MFP-Y5 DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H256M8HG-3:A vs H5PS2G83MFP-Y5
MT47H256M8HG-3IT:A DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H256M8HG-3:A vs MT47H256M8HG-3IT:A
H5PS2G83AFR-S5 DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H256M8HG-3:A vs H5PS2G83AFR-S5

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