Datasheets
TK20N60W5 by: Toshiba America Electronic Components

Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V

Part Details for TK20N60W5 by Toshiba America Electronic Components

Overview of TK20N60W5 by Toshiba America Electronic Components

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Part Details for TK20N60W5

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TK20N60W5 Part Data Attributes:

TK20N60W5 Toshiba America Electronic Components
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TK20N60W5 Toshiba America Electronic Components Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TK20N60W5

This table gives cross-reference parts and alternative options found for TK20N60W5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK20N60W5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STW26NM60N-H 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 STMicroelectronics TK20N60W5 vs STW26NM60N-H
Part Number Description Manufacturer Compare
IPP80N06S2L-11 Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG TK20N60W5 vs IPP80N06S2L-11
VP1116N5 Power Field-Effect Transistor, 1.8A I(D), 160V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc TK20N60W5 vs VP1116N5
MTP8P25 8A, 250V, 2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC TK20N60W5 vs MTP8P25
IRF9632 5.5A, 200V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation TK20N60W5 vs IRF9632
VP1120N5 Power Field-Effect Transistor, 1.8A I(D), 200V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc TK20N60W5 vs VP1120N5
PSMN035-150P Power Field-Effect Transistor Nexperia TK20N60W5 vs PSMN035-150P
SPP15P10P Power Field-Effect Transistor, 15A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG TK20N60W5 vs SPP15P10P
FDA50N50 Power MOSFET, N-Channel, UniFETTM, 500V, 48A, 105mΩ, TO-3P, 450-TUBE onsemi TK20N60W5 vs FDA50N50
SGSP482 30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics TK20N60W5 vs SGSP482
IRF9622 Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor TK20N60W5 vs IRF9622

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