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5961-01-248-0025
Renesas Electronics Corporation
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Check for Price | No | No | Contact Manufacturer | 12 GHz | 9 GHz | 120 V | IMPATT DIODE | YES | CONTINUOUS WAVE | 240 mA | 3.3 W | NOT SPECIFIED | NOT SPECIFIED | RENESAS ELECTRONICS CORP | unknown | EAR99 | 8541.10.00.60 | |||||||||||||||||||
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S8250B
Toshiba America Electronic Components
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Check for Price | Active | 20 GHz | 10 GHz | 120 V | GUNN DIODE | SINGLE | NO | 1 | CONTINUOUS WAVE | 2 W | 225 mA | 2 W | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.60 | ||||||||||||||||||||
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S8250A
Toshiba America Electronic Components
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Check for Price | Active | 20 GHz | 10 GHz | 120 V | GUNN DIODE | SINGLE | NO | 1 | CONTINUOUS WAVE | 1.7 W | 225 mA | 1.7 W | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.60 | ||||||||||||||||||||
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MA46019
TE Connectivity
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Check for Price | Transferred | 10 GHz | 9 GHz | 110 V | GALLIUM ARSENIDE | IMPATT DIODE | SINGLE | NO | 1 | IMPACT AVALANCHE TRANSIT TIME | PULSED | Not Qualified | O-CUPM-N1 | 225 °C | -65 °C | CATHODE | 1 | CERAMIC, METAL-SEALED COFIRED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | TYCO ELECTRONICS M/A-COM | unknown | EAR99 | 8541.10.00.60 | O-CUPM-N1 | |||||||||
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MA46020
TE Connectivity
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Check for Price | Transferred | 10 GHz | 9 GHz | 110 V | GALLIUM ARSENIDE | IMPATT DIODE | SINGLE | NO | 1 | IMPACT AVALANCHE TRANSIT TIME | PULSED | Not Qualified | O-CUPM-N1 | 225 °C | -65 °C | CATHODE | 1 | CERAMIC, METAL-SEALED COFIRED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | TYCO ELECTRONICS M/A-COM | unknown | EAR99 | 8541.10.00.60 | O-CUPM-N1 | |||||||||
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MI5001-18
Microchip Technology Inc
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Check for Price | Yes | Active | 5.4 GHz | 5.1 GHz | 85 V | GALLIUM ARSENIDE | IMPATT DIODE | SINGLE | NO | 1 | IMPATT | PULSED | 1 A | 10 W | Not Qualified | O-CUPM-N1 | CATHODE | 1 | CERAMIC, METAL-SEALED COFIRED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.60 | CERAMIC, ROHS COMPLIANT, M18 | ||||||||
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MI5001-18
Microsemi Corporation
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Check for Price | Yes | Transferred | 5.4 GHz | 5.1 GHz | 85 V | GALLIUM ARSENIDE | IMPATT DIODE | SINGLE | NO | 1 | IMPATT | PULSED | 1 A | 10 W | Not Qualified | O-CUPM-N1 | CATHODE | 1 | CERAMIC, METAL-SEALED COFIRED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.60 | CERAMIC, ROHS COMPLIANT, M18 | ||||||||
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VSC9251S1
Filtronic Compound Semiconductor
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Check for Price | Obsolete | 7 GHz | 5 GHz | 85 V | IMPATT DIODE | SINGLE | NO | 1 | PULSED | 16 W | 1.2 A | 16 W | FILTRONIC COMPOUND SEMICONDUCTOR | unknown | EAR99 | 8541.10.00.60 | ||||||||||||||||||||
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VSC9251S2
Filtronic Compound Semiconductor
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Check for Price | Obsolete | 7 GHz | 5 GHz | 85 V | IMPATT DIODE | SINGLE | NO | 1 | PULSED | 19 W | 1.2 A | 19 W | FILTRONIC COMPOUND SEMICONDUCTOR | unknown | EAR99 | 8541.10.00.60 | ||||||||||||||||||||
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S3019A
Toshiba America Electronic Components
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Check for Price | Active | 12 GHz | 6 GHz | 83 V | GUNN DIODE | SINGLE | NO | 1 | CONTINUOUS WAVE | 130 mA | 600 mW | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.60 |