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IS61VPS204836B-250B3L-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | Active | 75.4975 Mbit | 36 | 2MX36 | 2.5 V | 2.8 ns | CACHE SRAM | PIPELINED ARCHITECTURE | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | PARALLEL | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PBGA-B165 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||||||||
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71V256SA15YGI8
Integrated Device Technology Inc
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$1.0000 | Yes | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 3.3 V | 15 ns | CACHE SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 3 V | 85 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-J28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.556 mm | 17.9324 mm | 7.5184 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOJ-28 | compliant | EAR99 | 8542.32.00.41 | SOJ | 28 | PJG28 | 1988-01-01 | ||||
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IS61VVPS204818B-166B3LI-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | Active | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 3.5 ns | CACHE SRAM | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | PARALLEL | 1.89 V | 1.71 V | CMOS | INDUSTRIAL | R-PBGA-B165 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | 3A991.B.2.A | 8542.32.00.41 | Integrated Silicon Solution Inc. | |||||||||||||||||
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IS61VPS102436B-250B3L-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | Active | 37.7487 Mbit | 36 | 1MX36 | 2.5 V | 2.8 ns | CACHE SRAM | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | PARALLEL | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PBGA-B165 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 165 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED SILICON SOLUTION INC | TBGA, | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||||||||||
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IS64LPS12832EC-200TQLA3-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Yes | Active | 4.1943 Mbit | 32 | 128KX32 | 3.3 V | 3.1 ns | CACHE SRAM | PIPELINED ARCHITECTURE | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | AUTOMOTIVE | R-PQFP-G100 | 125 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED SILICON SOLUTION INC | LQFP, | compliant | 3A991.B.2.A | 8542.32.00.41 | Integrated Silicon Solution Inc. | ||||||||||||||||
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IS64LPS12836EC-200TQLA3-TR
Integrated Silicon Solution Inc
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$1.0000 | Yes | Active | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 3.1 ns | CACHE SRAM | PIPELINED ARCHITECTURE | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | AUTOMOTIVE | R-PQFP-G100 | 125 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED SILICON SOLUTION INC | LQFP, | compliant | 3A991.B.2.A | 8542.32.00.41 | Integrated Silicon Solution Inc. | |||||||||||||||||
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71V256SA12YG8
Integrated Device Technology Inc
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$1.0312 | Yes | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 3.3 V | 12 ns | CACHE SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 3 V | 90 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J28 | Not Qualified | e3 | 3 | 70 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.556 mm | 17.9324 mm | 7.5184 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOJ-28 | compliant | EAR99 | 8542.32.00.41 | SOJ | 28 | PJG28 | 1988-01-01 | |||||
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71V256SA15YG8
Integrated Device Technology Inc
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$1.1819 | Yes | Yes | Transferred | 262.144 kbit | 8 | 32KX8 | 3.3 V | 15 ns | CACHE SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 3 V | 85 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J28 | Not Qualified | e3 | 3 | 70 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.556 mm | 17.9324 mm | 7.5184 mm | INTEGRATED DEVICE TECHNOLOGY INC | SOJ-28 | compliant | EAR99 | 8542.32.00.41 | SOJ | 28 | PJG28 | 1988-01-01 | |||||
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71V256SA15YG8
Renesas Electronics Corporation
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$1.3383 | Yes | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 3.3 V | 15 ns | CACHE SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 mA | 3 V | 85 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J28 | Not Qualified | e3 | 3 | 70 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.556 mm | 17.9324 mm | 7.5184 mm | RENESAS ELECTRONICS CORP | compliant | NLR | 8542320041 | SOJ | 28 | PJG28 | Renesas Electronics | ||||||
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CY7C1399B-12VXC
Cypress Semiconductor
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$1.5745 | Yes | Obsolete | 262.144 kbit | 8 | 32KX8 | 3.3 V | 12 ns | CACHE SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 µA | 2 V | 55 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J28 | Not Qualified | e4 | 3 | 70 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | J BEND | 1.27 mm | DUAL | 3.556 mm | 17.907 mm | 7.5 mm | CYPRESS SEMICONDUCTOR CORP | 0.300 INCH, LEAD FREE, SOJ-28 | unknown | EAR99 | 8542.32.00.41 | SOJ | 28 |