Parametric results for: CAC 24 L under SRAMs

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Memory IC Type: CACHE SRAM
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IS61VPS204836B-250B3L-TR
Integrated Silicon Solution Inc
$1.0000 Yes Yes Active 75.4975 Mbit 36 2MX36 2.5 V 2.8 ns CACHE SRAM PIPELINED ARCHITECTURE 1 2000000 2.0972 M SYNCHRONOUS PARALLEL 2.625 V 2.375 V CMOS COMMERCIAL R-PBGA-B165 70 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY TBGA RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 15 mm 13 mm INTEGRATED SILICON SOLUTION INC TBGA, compliant 3A991.B.2.A 8542.32.00.41
71V256SA15YGI8
Integrated Device Technology Inc
$1.0000 Yes Yes Transferred 262.144 kbit 8 32KX8 3.3 V 15 ns CACHE SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 2 mA 3 V 85 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-J28 Not Qualified e3 3 85 °C -40 °C 260 40 28 PLASTIC/EPOXY SOJ SOJ28,.34 RECTANGULAR SMALL OUTLINE YES MATTE TIN J BEND 1.27 mm DUAL 3.556 mm 17.9324 mm 7.5184 mm INTEGRATED DEVICE TECHNOLOGY INC SOJ-28 compliant EAR99 8542.32.00.41 SOJ 28 PJG28 1988-01-01
IS61VVPS204818B-166B3LI-TR
Integrated Silicon Solution Inc
$1.0000 Yes Yes Active 37.7487 Mbit 18 2MX18 1.8 V 3.5 ns CACHE SRAM 1 2000000 2.0972 M SYNCHRONOUS PARALLEL 1.89 V 1.71 V CMOS INDUSTRIAL R-PBGA-B165 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY TBGA RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 15 mm 13 mm INTEGRATED SILICON SOLUTION INC TBGA, compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS61VPS102436B-250B3L-TR
Integrated Silicon Solution Inc
$1.0000 Yes Yes Active 37.7487 Mbit 36 1MX36 2.5 V 2.8 ns CACHE SRAM 1 1000000 1.0486 M SYNCHRONOUS PARALLEL 2.625 V 2.375 V CMOS COMMERCIAL R-PBGA-B165 70 °C NOT SPECIFIED NOT SPECIFIED 165 PLASTIC/EPOXY TBGA RECTANGULAR GRID ARRAY, THIN PROFILE YES BALL 1 mm BOTTOM 1.2 mm 15 mm 13 mm INTEGRATED SILICON SOLUTION INC TBGA, compliant 3A991.B.2.A 8542.32.00.41
IS64LPS12832EC-200TQLA3-TR
Integrated Silicon Solution Inc
$1.0000 Yes Yes Active 4.1943 Mbit 32 128KX32 3.3 V 3.1 ns CACHE SRAM PIPELINED ARCHITECTURE 1 128000 131.072 k SYNCHRONOUS PARALLEL 3.465 V 3.135 V CMOS AUTOMOTIVE R-PQFP-G100 125 °C -40 °C NOT SPECIFIED NOT SPECIFIED 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm INTEGRATED SILICON SOLUTION INC LQFP, compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
IS64LPS12836EC-200TQLA3-TR
Integrated Silicon Solution Inc
$1.0000 Yes Active 4.7186 Mbit 36 128KX36 3.3 V 3.1 ns CACHE SRAM PIPELINED ARCHITECTURE 1 128000 131.072 k SYNCHRONOUS PARALLEL 3.465 V 3.135 V CMOS AUTOMOTIVE R-PQFP-G100 125 °C -40 °C NOT SPECIFIED NOT SPECIFIED 100 PLASTIC/EPOXY LQFP RECTANGULAR FLATPACK, LOW PROFILE YES GULL WING 650 µm QUAD 1.6 mm 20 mm 14 mm INTEGRATED SILICON SOLUTION INC LQFP, compliant 3A991.B.2.A 8542.32.00.41 Integrated Silicon Solution Inc.
71V256SA12YG8
Integrated Device Technology Inc
$1.0312 Yes Yes Transferred 262.144 kbit 8 32KX8 3.3 V 12 ns CACHE SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 2 mA 3 V 90 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-J28 Not Qualified e3 3 70 °C 260 40 28 PLASTIC/EPOXY SOJ SOJ28,.34 RECTANGULAR SMALL OUTLINE YES MATTE TIN J BEND 1.27 mm DUAL 3.556 mm 17.9324 mm 7.5184 mm INTEGRATED DEVICE TECHNOLOGY INC SOJ-28 compliant EAR99 8542.32.00.41 SOJ 28 PJG28 1988-01-01
71V256SA15YG8
Integrated Device Technology Inc
$1.1819 Yes Yes Transferred 262.144 kbit 8 32KX8 3.3 V 15 ns CACHE SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 2 mA 3 V 85 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-J28 Not Qualified e3 3 70 °C 260 40 28 PLASTIC/EPOXY SOJ SOJ28,.34 RECTANGULAR SMALL OUTLINE YES MATTE TIN J BEND 1.27 mm DUAL 3.556 mm 17.9324 mm 7.5184 mm INTEGRATED DEVICE TECHNOLOGY INC SOJ-28 compliant EAR99 8542.32.00.41 SOJ 28 PJG28 1988-01-01
71V256SA15YG8
Renesas Electronics Corporation
$1.3383 Yes Yes Obsolete 262.144 kbit 8 32KX8 3.3 V 15 ns CACHE SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 2 mA 3 V 85 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-J28 Not Qualified e3 3 70 °C 260 40 28 PLASTIC/EPOXY SOJ SOJ28,.34 RECTANGULAR SMALL OUTLINE YES MATTE TIN J BEND 1.27 mm DUAL 3.556 mm 17.9324 mm 7.5184 mm RENESAS ELECTRONICS CORP compliant NLR 8542320041 SOJ 28 PJG28 Renesas Electronics
CY7C1399B-12VXC
Cypress Semiconductor
$1.5745 Yes Obsolete 262.144 kbit 8 32KX8 3.3 V 12 ns CACHE SRAM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 20 µA 2 V 55 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-J28 Not Qualified e4 3 70 °C 260 40 28 PLASTIC/EPOXY SOJ SOJ28,.34 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) J BEND 1.27 mm DUAL 3.556 mm 17.907 mm 7.5 mm CYPRESS SEMICONDUCTOR CORP 0.300 INCH, LEAD FREE, SOJ-28 unknown EAR99 8542.32.00.41 SOJ 28