NVHL080N120SC1 vs S2301 feature comparison

NVHL080N120SC1 onsemi

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S2301 ROHM Semiconductor

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Source Content uid NVHL080N120SC1
Pbfree Code Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer ON SEMICONDUCTOR ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3 UNCASED CHIP, X-XXUC-N
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2018-12-03
Avalanche Energy Rating (Eas) 171 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V 1200 V
Drain Current-Max (Abs) (ID) 44 A
Drain Current-Max (ID) 44 A 40 A
Drain-source On Resistance-Max 0.11 Ω 0.111 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3 X-XXUC-N
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR UNSPECIFIED
Package Style FLANGE MOUNT UNCASED CHIP
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 348 W
Pulsed Drain Current-Max (IDM) 136 A 80 A
Reference Standard AEC-Q101
Surface Mount NO YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE NO LEAD
Terminal Position SINGLE UNSPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON CARBIDE SILICON CARBIDE
Turn-off Time-Max (toff) 61 ns
Turn-on Time-Max (ton) 25 ns
Base Number Matches 1 1
Rohs Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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