Datasheets
C2M0080120D by:

MOSFET N-CH 1200V 31.6A TO247

Part Details for C2M0080120D by Wolfspeed

Overview of C2M0080120D by Wolfspeed

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Applications Energy and Power Systems Renewable Energy

Price & Stock for C2M0080120D

Part # Distributor Description Stock Price Buy
DISTI # 12X8365
Newark Power Mosfet, N Channel, 31.6 A, 1.2 Kv, 0.08 Ohm, 20 V, 3.2 V Rohs Compliant: Yes |Wolfspeed C2M0080120D Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 6537
  • 1 $27.1900
  • 5 $27.1900
  • 10 $25.2500
  • 25 $25.2500
  • 60 $23.5600
  • 120 $23.5600
  • 270 $23.5600
$23.5600 / $27.1900 Buy Now
DISTI # C2M0080120D-ND
DigiKey SICFET N-CH 1200V 36A TO247-3 Min Qty: 1 Lead time: 34 Weeks Container: Bulk 1595
In Stock
  • 1 $29.2400
  • 30 $24.2400
  • 120 $22.7250
  • 510 $19.3920
$19.3920 / $29.2400 Buy Now
DISTI # 941-C2M0080120D
Mouser Electronics MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT RoHS: Compliant 2055
  • 1 $29.2300
  • 10 $25.9700
  • 30 $24.2300
  • 60 $23.4800
  • 120 $22.7200
  • 270 $21.2000
$21.2000 / $29.2300 Buy Now
DISTI # 32726376
Verical Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin(3+Tab) TO-247 Tube Min Qty: 3 Package Multiple: 1 Date Code: 1906 Americas - 3900
  • 3 $23.8000
$23.8000 Buy Now
DISTI # 78958613
Verical Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin(3+Tab) TO-247 Tube Min Qty: 2 Package Multiple: 1 Americas - 2314
  • 2 $38.1361
  • 3 $36.8199
  • 5 $35.6972
  • 10 $34.7322
  • 20 $33.8972
  • 50 $33.1706
  • 100 $32.5351
  • 250 $31.9769
$31.9769 / $38.1361 Buy Now
DISTI # 32726368
Verical Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin(3+Tab) TO-247 Tube Min Qty: 3 Package Multiple: 1 Date Code: 1906 Americas - 1853
  • 3 $23.8000
$23.8000 Buy Now
DISTI # C2M0080120D
TME Transistor: N-MOSFET, SiC, unipolar, 1.2kV, 36A, 208W, TO247-3, 32ns Min Qty: 1 0
  • 1 $28.4000
  • 3 $25.5000
  • 10 $23.8000
  • 30 $22.1000
$22.1000 / $28.4000 RFQ
DISTI # C2M0080120D
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 5753
  • 1 $22.7300
  • 100 $21.7400
$21.7400 / $22.7300 Buy Now
DISTI # C1S155400235241
Chip1Stop Trans MOSFET N-CH Si 1.2KV 36A 3-Pin(3+Tab) TO-247 RoHS: Compliant pbFree: Yes Container: Tube 290
  • 1 $23.3000
  • 5 $20.2000
  • 10 $19.2000
  • 50 $17.2000
  • 100 $16.7000
$16.7000 / $23.3000 Buy Now
DISTI # 2361496
element14 Asia-Pacific MOSFET, N-CH, 1200V, 31.6A, SIC, TO247 RoHS: Compliant Min Qty: 1 Container: Each 4223
  • 1 $32.1958
  • 5 $29.4412
  • 10 $26.6866
  • 50 $25.8647
  • 100 $25.0206
$25.0206 / $32.1958 Buy Now
DISTI # 2361496
Farnell MOSFET, N-CH, 1200V, 31.6A, SIC, TO247 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 4223
  • 1 $29.9508
  • 5 $27.4005
  • 10 $24.8376
  • 50 $24.0712
  • 100 $23.8702
$23.8702 / $29.9508 Buy Now
LCSC TO-247-3 SiC MOSFETs ROHS 20
  • 1 $14.1228
  • 10 $13.5396
  • 30 $12.5298
  • 90 $11.6482
$11.6482 / $14.1228 Buy Now
Win Source Electronics SICFET N-CH 1200V 36A TO247-3 16000
  • 3 $18.3700
  • 7 $15.0730
  • 11 $14.6020
  • 15 $14.1310
  • 19 $13.6600
  • 25 $12.2470
$12.2470 / $18.3700 Buy Now

Part Details for C2M0080120D

C2M0080120D CAD Models

C2M0080120D Part Data Attributes:

C2M0080120D Wolfspeed
Buy Now Datasheet
Compare Parts:
C2M0080120D Wolfspeed MOSFET N-CH 1200V 31.6A TO247
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer WOLFSPEED INC
Package Description HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Reach Compliance Code compliant
Samacsys Manufacturer Wolfspeed
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.098 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for C2M0080120D

This table gives cross-reference parts and alternative options found for C2M0080120D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of C2M0080120D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCT2080KEC11 Power Field-Effect Transistor, ROHM Semiconductor C2M0080120D vs SCT2080KEC11
SCH2080KE Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor C2M0080120D vs SCH2080KE
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor C2M0080120D vs SCT2080KE
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor C2M0080120D vs SCT2080KEGC11
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor C2M0080120D vs SCT3080KLHRC11
SCT2080KEHRC11 Power Field-Effect Transistor, ROHM Semiconductor C2M0080120D vs SCT2080KEHRC11
Part Number Description Manufacturer Compare
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor C2M0080120D vs SCT3080KLHRC11
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor C2M0080120D vs SCT2080KEGC11
NVHL080N120SC1 Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified onsemi C2M0080120D vs NVHL080N120SC1
SCH2080KE Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor C2M0080120D vs SCH2080KE
S2301 Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE ROHM Semiconductor C2M0080120D vs S2301
MSC080SMA120B4 Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc C2M0080120D vs MSC080SMA120B4
SCT2080KE Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor C2M0080120D vs SCT2080KE
SCT2080KEHRC11 Power Field-Effect Transistor, ROHM Semiconductor C2M0080120D vs SCT2080KEHRC11
SCT2080KEC11 Power Field-Effect Transistor, ROHM Semiconductor C2M0080120D vs SCT2080KEC11

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