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Manufacturer Part Number: k4b1g16
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K4B1G1646G-BCF8T
 Samsung Semiconductor 		Check for Price Yes Yes Obsolete 1.0737 Gbit 16 64MX16 1.5 V 300 ps 533 MHz 8192 DDR3 DRAM COMMON 4,8 64000000 67.1089 M 3-STATE 4,8 10 mA 140 µA CMOS R-PBGA-B96 Not Qualified e3 1 260 96 PLASTIC/EPOXY FBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, FINE PITCH YES MATTE TIN BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC FBGA, BGA96,9X16,32 compliant EAR99 8542.32.00.32
K4B1G1646E-HCK0T
 Samsung Semiconductor 		Check for Price Yes Obsolete 1.0737 Gbit 16 64MX16 1.5 V 100 ps 800 MHz 8192 DDR3 DRAM COMMON 4,8 64000000 67.1089 M 3-STATE 4,8 CMOS R-PBGA-B96 Not Qualified e1 3 260 96 PLASTIC/EPOXY FBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.32
K4B1G1646E-HCF8T
 Samsung Semiconductor 		Check for Price Yes Obsolete 1.0737 Gbit 16 64MX16 1.5 V 150 ps 533 MHz 8192 DDR3 DRAM COMMON 4,8 64000000 67.1089 M 3-STATE 4,8 10 mA 200 µA CMOS R-PBGA-B96 Not Qualified e1 3 260 96 PLASTIC/EPOXY FBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.32
K4B1G1646I-BYK00
 Samsung Semiconductor 		Check for Price Obsolete 1.0737 Gbit 16 64MX16 1.35 V MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY 1 1 64000000 67.1089 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 85 °C -40 °C 96 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1 mm 13.3 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC VFBGA, compliant EAR99 8542.32.00.32
K4B1G1646E-HCF80
 Samsung Semiconductor 		Check for Price Yes Obsolete 1.0737 Gbit 16 64MX16 1.5 V 300 ps 533 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 4,8 10 mA 200 µA 1.575 V 1.425 V CMOS OTHER R-PBGA-B96 Not Qualified e1 3 95 °C 260 96 PLASTIC/EPOXY TFBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13.3 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC TFBGA, BGA96,9X16,32 unknown EAR99 8542.32.00.32 BGA 96
K4B1G1646G-BCK0T
 Samsung Semiconductor 		Check for Price Yes Yes Obsolete 1.0737 Gbit 16 64MX16 1.5 V 225 ps 800 MHz 8192 DDR3 DRAM COMMON 4,8 64000000 67.1089 M 3-STATE 4,8 10 mA 195 µA CMOS R-PBGA-B96 Not Qualified e3 1 260 96 PLASTIC/EPOXY FBGA BGA96,9X16,32 RECTANGULAR GRID ARRAY, FINE PITCH YES MATTE TIN BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC FBGA, BGA96,9X16,32 compliant EAR99 8542.32.00.32
K4B1G1646C-ZCF80
 Samsung Semiconductor 		Check for Price Yes Obsolete 1.0737 Gbit 16 64MX16 1.5 V 300 ps 533 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 8 1 1 64000000 67.1089 M SYNCHRONOUS 3-STATE YES 8 1.575 V 1.452 V CMOS COMMERCIAL EXTENDED R-PBGA-B112 Not Qualified 85 °C NOT SPECIFIED NOT SPECIFIED 112 PLASTIC/EPOXY TFBGA BGA112,11X22,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 18 mm 11 mm SAMSUNG SEMICONDUCTOR INC TFBGA, BGA112,11X22,32 compliant EAR99 8542.32.00.32 BGA 112
K4B1G1646D-HCH9
 Samsung Semiconductor 		Check for Price Yes Obsolete 1.0737 Gbit 16 64MX16 1.5 V 255 ps 667 MHz 8192 DDR3 DRAM COMMON 8 64000000 67.1089 M 3-STATE 8 10 mA 350 µA CMOS R-PBGA-B100 Not Qualified e1 3 260 100 PLASTIC/EPOXY FBGA BGA100,11X16,32 RECTANGULAR GRID ARRAY, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.32
K4B1G1646I-BMK00
 Samsung Semiconductor 		Check for Price Obsolete 1.0737 Gbit 16 64MX16 1.35 V MULTI BANK PAGE BURST DDR DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY 1 1 64000000 67.1089 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 85 °C -40 °C 96 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1 mm 13.3 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC VFBGA, compliant EAR99 8542.32.00.32
K4B1G1646I-BMMA0
 Samsung Semiconductor 		Check for Price Obsolete 1.0737 Gbit 16 64MX16 1.35 V MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY 1 1 64000000 67.1089 M SYNCHRONOUS YES 1.45 V 1.283 V CMOS INDUSTRIAL R-PBGA-B96 85 °C -40 °C 96 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1 mm 13.3 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC VFBGA, compliant EAR99 8542.32.00.32
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