Parametric results for: MT29F under Flash Memories

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Manufacturer Part Number: mt29f
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MT29F4G16ABBFAH4-AAT:F
Micron Technology Inc
$1.1145 Active e1 260 30 TIN SILVER COPPER MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 2020-03-31 Micron
MT29F2G08ABAGAH4-IT:G
Micron Technology Inc
$1.5675 Active FLASH 3.3 V SLC NAND TYPE e1 NOT SPECIFIED NOT SPECIFIED Tin/Silver/Copper (Sn/Ag/Cu) MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 Micron
MT29F1G08ABAEAWP:E
Micron Technology Inc
$1.5950 Yes Active 1.0737 Gbit 8 128MX8 3.3 V FLASH 1 128000000 134.2177 M ASYNCHRONOUS PARALLEL 2.7 V 3.6 V 2.7 V CMOS COMMERCIAL SLC NAND TYPE R-PDSO-G48 e3 70 °C NOT SPECIFIED NOT SPECIFIED 48 PLASTIC/EPOXY TSOP1 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Matte Tin (Sn) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 Micron TSOP1,
MT29F2G01ABBGDWB-IT:G
Micron Technology Inc
$1.6575 Active FLASH 1.8 V SLC NAND TYPE NOT SPECIFIED NOT SPECIFIED MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 Micron ,
MT29F2G08ABBGAH4-IT:G
Micron Technology Inc
$1.8171 Yes Active FLASH 1.8 V SLC NAND TYPE NOT SPECIFIED NOT SPECIFIED MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 Micron
MT29F1G01ABBFDWB-IT:F
Micron Technology Inc
$1.9535 Yes Active 1.0737 Gbit 8 128MX8 1.8 V 83 MHz FLASH 10 100000 Write/Erase Cycles 1 128000000 134.2177 M SYNCHRONOUS 3-STATE SERIAL 1.8 V SPI 50 µA 35 µA 1.95 V 1.7 V CMOS SLC NAND TYPE HARDWARE/SOFTWARE R-XDSO-N8 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 8 PLASTIC/EPOXY HVSON SOLCC8,.3 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES NO LEAD 1.27 mm DUAL 650 µm 8 mm 6 mm MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 Micron
MT29F1G08ABBEAH4-ITX:E
Micron Technology Inc
$2.2250 Yes Obsolete 1.0737 Gbit 8 128K 128MX8 1.8 V FLASH NO YES 100000 Write/Erase Cycles 1 1K 128000000 134.2177 M ASYNCHRONOUS 3-STATE 2K words PARALLEL 1.8 V YES 50 µA 20 µA 1.95 V 1.7 V CMOS YES SLC NAND TYPE R-PBGA-B63 85 °C -40 °C 63 PLASTIC/EPOXY VFBGA BGA63,10X12,32 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1 mm 11 mm 9 mm MICRON TECHNOLOGY INC compliant Micron VFBGA-63
MT29F1G08ABAFAH4-ITE:F
Micron Technology Inc
$2.3850 Yes Obsolete 1.0737 Gbit 8 128MX8 3.3 V FLASH 1 128000000 134.2177 M ASYNCHRONOUS PARALLEL 3.3 V 3.6 V 2.7 V CMOS INDUSTRIAL SLC NAND TYPE R-PBGA-B63 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 63 PLASTIC/EPOXY VFBGA RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1 mm 11 mm 9 mm MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 Micron VFBGA,
MT29F2G08ABAGAWP-IT:G
Micron Technology Inc
$2.4542 Yes Active 2.1475 Gbit 8 256MX8 FLASH 1 256000000 268.4355 M ASYNCHRONOUS CMOS INDUSTRIAL SLC NAND TYPE e3 85 °C -40 °C 260 30 PLASTIC/EPOXY MATTE TIN MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.51 Micron
MT29F2G01ABAGDWB-IT:G
Micron Technology Inc
$2.4763 Yes Active 2.1475 Gbit 8 256MX8 3.3 V 133 MHz FLASH 10 100000 Write/Erase Cycles 1 256000000 268.4355 M SYNCHRONOUS SERIAL 3.3 V SPI 50 µA 35 µA 3.6 V 2.7 V CMOS SLC NAND TYPE HARDWARE/SOFTWARE R-PDSO-N8 e4 85 °C -40 °C 260 30 8 PLASTIC/EPOXY VSON SOLCC8,.3 RECTANGULAR SMALL OUTLINE, VERY THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 1.27 mm DUAL 650 µm 8 mm 6 mm MICRON TECHNOLOGY INC compliant Micron UDFN-8