Part Details for K4S161622D-TE60 by Samsung Semiconductor
Overview of K4S161622D-TE60 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4S161622D-TE60
K4S161622D-TE60 CAD Models
K4S161622D-TE60 Part Data Attributes:
|
K4S161622D-TE60
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
K4S161622D-TE60
Samsung Semiconductor
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 5.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -25 °C | |
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 2048 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.15 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S161622D-TE60
This table gives cross-reference parts and alternative options found for K4S161622D-TE60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S161622D-TE60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
V54C316162VT6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Mosel Vitelic Corporation | K4S161622D-TE60 vs V54C316162VT6 |
MT48LC1M16A1TG-6SIT | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Micron Technology Inc | K4S161622D-TE60 vs MT48LC1M16A1TG-6SIT |
K4S161622H-UC60T | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50 | Samsung Semiconductor | K4S161622D-TE60 vs K4S161622H-UC60T |
HY57V161610DTC-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | K4S161622D-TE60 vs HY57V161610DTC-6 |
K4S161622D-TP70 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | K4S161622D-TE60 vs K4S161622D-TP70 |
MB81F161622B-60FN | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | FUJITSU Limited | K4S161622D-TE60 vs MB81F161622B-60FN |
IS42S16100F-6TLI | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 | Integrated Silicon Solution Inc | K4S161622D-TE60 vs IS42S16100F-6TLI |
AS4LC1M16S0-7TC | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Alliance Semiconductor Corporation | K4S161622D-TE60 vs AS4LC1M16S0-7TC |
MT48LC1M16A1TG-7SIT | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Micron Technology Inc | K4S161622D-TE60 vs MT48LC1M16A1TG-7SIT |
W981616CH-6 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Winbond Electronics Corp | K4S161622D-TE60 vs W981616CH-6 |