Datasheets
K4S161622H-UC600 by: Samsung Semiconductor

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50

Part Details for K4S161622H-UC600 by Samsung Semiconductor

Overview of K4S161622H-UC600 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K4S161622H-UC600

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K4S161622H-UC600 Part Data Attributes:

K4S161622H-UC600 Samsung Semiconductor
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K4S161622H-UC600 Samsung Semiconductor Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2,
Pin Count 50
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G50
Length 20.95 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 2
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S161622H-UC600

This table gives cross-reference parts and alternative options found for K4S161622H-UC600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S161622H-UC600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V54C316162VT6 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Mosel Vitelic Corporation K4S161622H-UC600 vs V54C316162VT6
MT48LC1M16A1TG-6SIT Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc K4S161622H-UC600 vs MT48LC1M16A1TG-6SIT
K4S161622H-UC60T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-50 Samsung Semiconductor K4S161622H-UC600 vs K4S161622H-UC60T
HY57V161610DTC-6 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc K4S161622H-UC600 vs HY57V161610DTC-6
K4S161622D-TP70 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor K4S161622H-UC600 vs K4S161622D-TP70
MB81F161622B-60FN Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited K4S161622H-UC600 vs MB81F161622B-60FN
IS42S16100F-6TLI Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 Integrated Silicon Solution Inc K4S161622H-UC600 vs IS42S16100F-6TLI
AS4LC1M16S0-7TC Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Alliance Semiconductor Corporation K4S161622H-UC600 vs AS4LC1M16S0-7TC
MT48LC1M16A1TG-7SIT Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc K4S161622H-UC600 vs MT48LC1M16A1TG-7SIT
W981616CH-6 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Winbond Electronics Corp K4S161622H-UC600 vs W981616CH-6
Part Number Description Manufacturer Compare
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc K4S161622H-UC600 vs IS42S16100B-6T
IS42VS16100D-10T Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc K4S161622H-UC600 vs IS42VS16100D-10T
AS4LC1M16S0-12TC Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Alliance Semiconductor Corporation K4S161622H-UC600 vs AS4LC1M16S0-12TC
MSM56V16160DH-15TS-K Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 LAPIS Semiconductor Co Ltd K4S161622H-UC600 vs MSM56V16160DH-15TS-K
HY57V161610DTC-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc K4S161622H-UC600 vs HY57V161610DTC-8
M12L16161A-5TIG Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 Elite Semiconductor Memory Technology Inc K4S161622H-UC600 vs M12L16161A-5TIG
KM416S1120DT-F7 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor K4S161622H-UC600 vs KM416S1120DT-F7
K4S161622D-TC80 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor K4S161622H-UC600 vs K4S161622D-TC80
VG3617161DT-6 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation K4S161622H-UC600 vs VG3617161DT-6
HY57V161610ETP-5I Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 SK Hynix Inc K4S161622H-UC600 vs HY57V161610ETP-5I

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