BSP52/T3
vs
BSP52T3G
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
ONSEMI
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
TO-261, 4 PIN
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
0.5 A
|
1 A
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
2000
|
2000
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1.5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
|
| VCEsat-Max |
1.3 V
|
|
| Base Number Matches |
2
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SOT-223 (TO-261) 4 LEAD
|
| Pin Count |
|
4
|
| Manufacturer Package Code |
|
0.0318
|
| Factory Lead Time |
|
64 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| JEDEC-95 Code |
|
TO-261AA
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
1.25 W
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BSP52/T3 with alternatives
Compare BSP52T3G with alternatives