BSP52E6327 vs BSP52/T3 feature comparison

BSP52E6327 Infineon Technologies AG

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BSP52/T3 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 1 A 0.5 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration DARLINGTON DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 2000 2000
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 1.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 200 MHz
Turn-off Time-Max (toff) 1500 ns
Turn-on Time-Max (ton) 400 ns
Base Number Matches 2 1
HTS Code 8541.29.00.75
Power Dissipation Ambient-Max 1.5 W
Transistor Application SWITCHING
VCEsat-Max 1.3 V

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